Semiconductor device having an elevated active region formed in an oxide trench and method of manufacture thereof

  • US 5,872,038 A
  • Filed: 01/08/1997
  • Issued: 02/16/1999
  • Est. Priority Date: 01/08/1997
  • Status: Expired due to Term
First Claim
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1. A process of forming a semiconductor device, the process comprising:

  • forming a plurality of gate electrodes on a substrate, an active region of the substrate being defined by adjacent walls of two gate electrodes;

    forming an insulating layer over the gate electrodes and the active region;

    etching a trench in the insulating layer to expose a portion of the active region of the substrate;

    filling the trench with a polysilicon material; and

    doping the polysilicon material to form an elevated active region above the active region of the substrate.

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