Electrically alterable non-volatile memory with N-bits per cell

  • US 5,872,735 A
  • Filed: 08/15/1997
  • Issued: 02/16/1999
  • Est. Priority Date: 02/08/1991
  • Status: Expired due to Term
First Claim
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1. A method of programming an electrically alterable non-volatile memory cell having more than two memory states, comprising:

  • applying a plurality of programming pulses to said memory cell, said plurality of programming pulses including at least a first programming pulse and a subsequent programming pulse having a smaller pulse width than said first programming pulse, so as to program said memory cell to a selected one of said memory states.

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