Process for forming a semiconductor device

  • US 5,893,752 A
  • Filed: 12/22/1997
  • Issued: 04/13/1999
  • Est. Priority Date: 12/22/1997
  • Status: Expired due to Term
First Claim
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1. A process for forming a semiconductor device comprising the steps of:

  • placing a substrate in a processing chamber;

    forming a first conductive film that includes a refractory metal and nitrogen over the substrate, wherein;

    the first conductive film includes a first portion and a second portion;

    the first portion lies closer to the substrate and has a first nitrogen atomic percentage;

    the second portion lies further from the substrate has a second nitrogen atomic percentage that is lower than the first nitrogen atomic percentage; and

    a change between the first nitrogen atomic percent and the second atomic percent within the first conductive film is essentially continuous; and

    forming a second conductive film over the first conductive film, wherein the second conductive film includes mostly copper.

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