Semiconductor detector

• US 5,905,264 A
• Filed: 08/04/1997
• Issued: 05/18/1999
• Est. Priority Date: 08/14/1996
• Status: Expired due to Term

• Current Assignee: GE Medical Systems Israel, Ltd
• Original Assignee: IMARAD Imaging Systems Ltd. (General Electric Company)
• Inventors: Gorin, Alex, Halbertal, Eldan, Shahar, Arie, El-Hanany, Uri, Klier, Shimon, Tsigelman, Alex
• Primary Examiner(s): Hannaher, Constantine
• Application Number:
  US08/905,644
• Time in Patent Office: 652 Days
• Field of Search: 250/371, 250/370.01
• US Class Current: 250/370.01
• CPC Class Codes: G01T 1/241 Electrode arrangements, e.g. continuous or parallel strips or the like constructional or manufacturing details H01L31/00
• CPC Class Codes: G01T 1/243 Modular detectors, e.g. arrays formed from self contained units constructional or manufacturing details H01L25/00
• CPC Class Codes: H01L 27/14601 Structural or functional details thereof
• CPC Class Codes: H01L 27/14676 X-ray, gamma-ray or corpuscular radiation imagers measuring X-, gamma- or corpuscular radiation G01T1/00

Abstract

A semiconductive detector includes a semiconductor substrate having electrodes formed at two opposite-facing surfaces thereof. A peripheral side-wall extends between the two opposite facing-surfaces, and an electrical insulator is formed on at least a portion of the side wall. An electrical conductor is provided over the insulator. A bias voltage may be applied to the conductor such that the electrical insulator and the conductor operate generally in a manner of a field effect transistor.

Claims

1. A semiconductor detector comprising:

a substrate formed of a semiconductor material and defining two opposite facing surfaces and at least one side wall;

electrodes formed on two opposite facing surfaces of the substrate;

an electrical insulator formed on at least part of said at least one side wall; and

an electrical conductor formed over at least part of said electrical insulator, wherein said electrodes, said electrical insulator and said conductor operate generally in the manner of a field-effect transistor.

2. Apparatus according to claim 1 wherein said electrical conductor is floating and is electrically isolated from said substrate and said electrodes.

3. Apparatus according to claim 1 wherein said electrical conductor, for any bias value and polarity thereof, induces an electric field through said electrical insulator into said semiconductor material, thereby pulling electrons from a region adjacent said at least one side wall towards said electrical insulator, and producing a space charge at a boundary between said electrical insulator and said at least one side wall, said space charge shifting trajectories of charge carriers away from said region adjacent said at least one side wall.

4. Apparatus according to claim 1 and further comprising at least one anode and at least one cathode, wherein said electrical conductor is substantially maintained at a potential relative to said at least one cathode, said potential being of the same polarity and less than an electrical potential substantially maintained between at said at least one anode and said at least one cathode.

5. Apparatus according to claim 1 wherein said electrical conductor is grounded.

6. An array of modular semiconductor detector assemblies, each detector assembly including:

a substrate formed of a semiconductor material and defining two opposite facing surfaces; and

electrodes formed on two opposite facing surfaces of the substrate;

at least some of said modular detector assemblies defining at least one side wall at an edge of said array and including;

an electrical insulator formed on at least part of said at least one side wall; and

an electrical conductor formed over at least part of said electrical insulator, wherein said electrodes, said electrical insulator and said conductor operate generally in the manner of a field-effect transistor.

7. A detector plane comprising a plurality of adjacent detector arrays according to claim 6 and wherein peripheral side walls of adjacent detector assemblies have a common conductor functioning as a FET gate electrode.

8. A detector plane comprising a plurality of adjacent detector arrays according to claim 6 and wherein peripheral side walls of adjacent detector assemblies have separate conductors each functioning as a FET gate electrode.

9. Apparatus according to claim 6 wherein said electrical conductor is floating and is electrically isolated from said substrate and said electrodes.

10. Apparatus according to claim 6 wherein said electrical conductor, for any bias value and polarity thereof, induces an electric field through said electrical insulator into said semiconductor material, thereby pulling electrons from a region adjacent said at least one side wall towards said electrical insulator, and producing a space charge at a boundary between said electrical insulator and said at least one side wall, said space charge shifting trajectories of charge carriers away from said region adjacent said at least one side wall.

11. Apparatus according to claim 6 and further comprising at least one anode and at least one cathode, wherein said electrical conductor is substantially maintained at a potential relative to said at least one cathode, said potential being of the same polarity and less than an electrical potential substantially maintained between at said at least one anode and said at least one cathode.

12. Apparatus according to claim 6 wherein said electrical conductor is grounded.

13. A method for overcoming performance degradation in a semiconductor detector due to non-uniformities in an electric field adjacent a side wall, the detector comprising a substrate formed of a semiconductor material and defining two opposite facing surfaces and at least one side wall, and also comprising electrodes formed on two opposite facing surfaces of the substrate, the method comprising the steps of:

forming an electrical insulator on at least part of said at least one side wall; and

forming an electrical conductor over at least part of said electrical insulator, wherein said electrodes, said electrical insulator and said conductor operate generally in the manner of a field-effect transistor.

14. A method according to claim 13 and comprising the step of inducing an electric field through said electrical insulator into said semiconductor material, thereby pulling electrons from a region adjacent said at least one side wall towards said electrical insulator, and producing a space charge at a boundary between said electrical insulator and said at least one side wall, said space charge shifting trajectories of charge carriers away from said region adjacent said at least one side wall.