Photogate sensor with improved responsivity

• US 5,909,041 A
• Filed: 11/21/1997
• Issued: 06/01/1999
• Est. Priority Date: 11/21/1997
• Status: Expired due to Term

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Hosier, Paul A., Tandon, Jagdish C., Tewinkle, Scott L.
• Primary Examiner(s): Whitehead, Jr., Carl
• Assistant Examiner(s): Fenty, Jesse A.
• Application Number:
  US08/976,273
• Time in Patent Office: 557 Days
• Field of Search: 257/215, 257/216, 257/222, 257/249, 257/233, 257/291, 257/292
• US Class Current: 257/292
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70

Abstract

A depleted-gate photosensor, or photogate, structure includes a polysilicon layer disposed over a silicon substrate. The polysilicon layer occupies only a portion of each exposure area of the substrate, and is preferably in the form of a ring around the exposure area. By having a portion of the exposure area not covered by the polysilicon, the blue-light-attenuation effects of a polysilicon layer are reduced.

Claims

1. A depleted-gate photosensor, comprising:

a substrate comprising continuously-doped, single-crystal silicon, the substrate defining a main surface including an exposure area exposable to light;

an oxide layer disposed on the main surface of the substrate, the oxide layer defining a gap in the main surface of the substrate, the layer including oxide immediately adjacent the gap within the exposure areas, the gap being defined in only a portion of the exposure area;

a polysilicon layer disposed on the main surface, the polysilicon layer substantially covering the gap and extending over a portion of the exposure area and over a portion of the oxide layer immediately outside the gap; and

a gate oxide layer disposed between the substrate and the polysilicon layer within the gap.

2. The photosensor of claim 1, the gap configured to form an enclosed area in the exposure area in a portion of the main surface of the substrate.

3. The photosensor of claim 1, the substrate and polysilicon layer forming, at an interface thereof, a gate having a predetermined threshold voltage.

4. The photosensor of claim 1, further comprising a transfer gate connected to the oxide layer.

5. The photosensor of claim 4, wherein the transfer gate includes a second polysilicon layer disposed immediately adjacent the polysilicon layer of the photosensor.

6. The photosensor of claim 1, the polysilicon layer configured to form an enclosed area in the exposure area in a portion of the main surface of the substrate.