Scratch reduction in semiconductor circuit fabrication using chemical-mechanical polishing

• US 5,913,712 A
• Filed: 03/12/1997
• Issued: 06/22/1999
• Est. Priority Date: 08/09/1995
• Status: Expired due to Term

• Current Assignee: DSS Technology Management, Inc. (Document Security Systems, Inc.)
• Original Assignee: Cypress Semiconductor Corporation (Infineon Technologies AG)
• Inventors: Molinar, Hector
• Primary Examiner(s): Morgan, Eileen P.
• Application Number:
  US08/816,390
• Time in Patent Office: 832 Days
• Field of Search: 451/41, 451/57, 451/283, 451/285, 451/287, 451/288, 451/59, 451/63
• US Class Current: 451/41
• CPC Class Codes: B24B 37/04 designed for working plane surfaces
• CPC Class Codes: B24B 37/042 operating processes therefor

Abstract

A process for polishing a layer on a semiconductor wafer in which the incidence of undesirable scratches on the polished surface is reduced by using a multiple step polishing procedure. A relatively hard polishing pad is used first to planarize the wafer surface, using a chemically reactive and abrasive slurry. A second polishing step is then carried out on a relatively soft polishing pad, using a slurry to remove or reduce scratches introduced by polishing with the hard pad. A final polishing step is performed on the soft polishing pad using de-ionized water to remove particles from the surface of the wafer.

Claims

1. A process for planarizing a layer on a substrate, comprising the steps of:

a first polishing step comprising polishing said layer on a first polishing pad;

a second polishing step comprising polishing said layer on a second polishing pad having a higher compressibility than said first polishing pad at an effective pressure to reduce scratches in said layer; and

a third rising step comprising rinsing said layer on said second polishing pad using water.

2. A process as claimed in claim 1, wherein the compressibility of said second polishing pad is substantially greater than the compressibility of said first polishing pad.

3. The process as claimed in claim 1 wherein the first polishing step is performed using a first slurry and the second polishing step is performed using a second slurry.

4. The process as claimed in claim 3, wherein the slurry used in said first and second polishing steps comprises an aqueous solution having a pH in the range of 10 to 11.

5. The process as claimed in claim 4, wherein the slurry used in said first and second polishing steps comprises an aqueous solution having a pH in the range of 10.2 to 10.7.

6. The process as claimed in claim 4, wherein the slurry used in said first and second polishing steps further comprises silica or silica oxide particles in the range of about 5% to 20% by weight.

7. The process as claimed in claim 6, wherein the slurry used in said first and second polishing steps further comprises silica or silica oxide particles substantially in the range of 12% to 15% by weight.

8. A process as claimed in claim 2, wherein said first polishing pad is constructed from blown polyurethane and said second polishing pad comprises a felt-like material.

9. The process as claimed in claim 1, wherein said first polishing step comprises applying a surface of said layer to a surface of said first polishing pad with a pressure substantially in the range 3.5 to 9 pounds-per-square-inch (PSI).

10. The process as claimed in claim 9, wherein said first polishing step includes rotating each of said substrate and said first polishing pad at a speed of up to 30 revolutions-per-minute (RPM).

11. The process as claimed in claim 10, wherein said first polishing step comprises applying said layer to said first polishing pad with a pressure of about 7 PSI and rotating said substrate and said first polishing pad at about 12 RPM and 13 RPM, respectively.

12. A process as claimed in claim 11, wherein said first polishing step is carried out for a period of between about one minute and about four minutes.

13. The process as claimed in claim 1, wherein said second polishing step comprises applying a surface of said layer to a surface of said second polishing pad with a pressure substantially in the range of about 2 to 5 pounds-per-square-inch (PSI).

14. The process as claimed in claim 13, wherein said second polishing step comprises applying said layer to said second polishing pad with a pressure of about 3.5 PSI and rotating said substrate and said second polishing pad at about 12 RPM and 13 RPM, respectively.

15. A process as claimed in claim 14, wherein said second polishing step is carried out for at least 30 seconds.

16. The process as claimed in claim 1, wherein said third rinsing step comprises applying a surface of said layer to a surface of said second polishing pad with a pressure in the range of about 0.5 to 1.5 pounds-per-square-inch (PSI).

17. The process as claimed in claim 16, wherein said third rinsing step comprises applying said layer to said second polishing pad with a pressure substantially in the range 0.7 to 1.0 PSI and rotating each of said substrate and said second polishing pad greater than about 30 RPM.

18. The process as claimed in claim 3 wherein the first and second slurries are the same.

19. The process as claimed in claim 1, wherein said second and third polishing steps are performed by applying a surface of said layer to a surface of said second polishing pad and rotating both said substrate and said second polishing pad relative to one another, wherein the rotation of said substrate and said second polishing pad during said third rinsing step is at substantially higher rotational rates than during said second polishing step.

20. The process as claimed in claim 1, wherein the first polishing step is conducted at a pressure of from about 7.0 to 9.0 PSI.

21. The process as claimed in claim 9, wherein said effective pressure in said second polishing step is substantially in the range of about 2 to 5 PSI.

22. A process for planarizing a layer on a substrate, comprising the steps of:

a first polishing step comprising polishing said layer on a first polishing pad using a first slurry;

a second polishing step comprising polishing said layer on a second polishing pad having a higher compressibility than said first polishing pad using a second slurry at a pressure effective to remove or reduce scratches in said layer; and

a third rinsing step comprising rinsing said wafer on a soft polishing pad using water.

23. A process as claimed in claim 22, wherein said soft polishing pad for said third polishing step comprises said second polishing pad.

24. The process as claimed in claim 23, wherein said second polishing step and third rinsing step are performed by applying a surface of said layer to a surface of said second polishing pad and rotating both said substrate and said second polishing pad relative to one another, wherein the rotation of said substrate and said second polishing pad during said third rinsing step is at substantially higher rotational rates than during said second polishing step.

25. A substrate having a layer planarized by a process comprising the following steps:

a first polishing step comprising polishing said layer on a first polishing pad using a first slurry having a first polishing reagent;

a second polishing step comprising polishing said layer on a second polishing pad having a higher compressibility than said first polishing pad using a second slurry, at a pressure effective to reduce scratches in said layer; and

a third rinsing step comprising rinsing said layer on said second polishing pad using water.