Junction termination for SiC Schottky diode
First Claim
1. A semiconductor device comprising a first conducting type layer and a metal contact layer forming a Schottky junction, the first conducting type later being made of silicon carbide (SiC), and wherein said junction is provided with an edge termination comprising a transition belt (TB) surrounded by a Junction Termination Extension (JTE), said transition belt having increasing charge level outwardly from the junction and said JTE having stepwise or continuously decreasing charge level outwardly.
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Accused Products
Abstract
A semiconductor diode structure with a Schottky junction, wherein a metal contact and a silicon carbide semiconductor layer of a first conducting type form the junction and wherein the edge of the junction exhibits a junction termination divided into a transition belt (TB) having gradually increasing total charge or effective sheet charge density closest to the metal contact and a Junction Termination Extension (JTE) outside the transition belt, the JTE having a charge profile with a stepwise or uniformly deceasing total charge or effective sheet charge density from an initial value to a zero or almost zero total charge at the outermost edge of the termination following a radial direction from the center part of the JTE towards the outermost edge of the termination. The purpose of the transition belt is to reduce the electric field concentration at the edge of the metal contact of the Schottky diode, while the purpose of the junction termination extension is to control the electric field at the periphery of the diode.
131 Citations
17 Claims
- 1. A semiconductor device comprising a first conducting type layer and a metal contact layer forming a Schottky junction, the first conducting type later being made of silicon carbide (SiC), and wherein said junction is provided with an edge termination comprising a transition belt (TB) surrounded by a Junction Termination Extension (JTE), said transition belt having increasing charge level outwardly from the junction and said JTE having stepwise or continuously decreasing charge level outwardly.
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9. A method of manufacturing a semiconductor device comprising a first conducting type layer and a metal contact layer forming a Schottky junction, wherein the first conducting type layer is made of Silicon Carbide (SiC), said method including the steps of:
- providing the surface of said first conducting type layer outside the edge of the Schottky junction with an edge termination by forming a transition belt (TB) having outwardly increasing charge level and forming a Junction Termination Extension (JTE) surrounding said transition belt (TB), said JTE having stepwise or continuously decreasing charge level.
- View Dependent Claims (10, 11, 12, 13, 14)
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15. A method of manufacturing a semiconductor device comprising a first conducting type layer and a metal contact layer forming a Schottky junction, wherein the first conducting type layer is made of silicon carbide (SiC), the method comprising the steps of:
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epitaxially growing a second layer of a second conducting type SiC material on top of said first layer, etching a trench with tapered walls down to said first layer in a center of said second layer, applying a Schottky contact in said trench, and forming said second layer to have outwardly decreasing thickness. - View Dependent Claims (16, 17)
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Specification