Method of fabricating a self-aligned silicide MOSFET

  • US 5,920,783 A
  • Filed: 04/06/1998
  • Issued: 07/06/1999
  • Est. Priority Date: 02/07/1998
  • Status: Expired due to Term
First Claim
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1. A method of fabricating a MOSFET device, comprising the sequential steps of:

  • providing a substrate, wherein a gate is on the substrate;

    forming an oxide layer on the substrate, and implanting the substrate with first ions;

    forming a first depositing layer;

    etching the first depositing layer to form a first spacer, and implanting the substrate with second ions;

    forming a second depositing layer;

    etching the second depositing layer to form a second spacer alongside the first spacer;

    etching the oxide layer to expose part of the side walls of the gate; and

    forming a metal silicide layer by a self-aligned process by depositing a metal layer so that the metal layer contacts said exposed part of the sidewall of the gate.

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