Electronic device

• US 5,929,527 A
• Filed: 07/16/1997
• Issued: 07/27/1999
• Est. Priority Date: 07/16/1996
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Teramoto, Satoshi, Yamazaki, Shunpei
• Primary Examiner(s): Martin-Wallace, Valencia
• Assistant Examiner(s): Fenty, Jesse A.
• Application Number:
  US08/895,432
• Time in Patent Office: 741 Days
• Field of Search: 257/765, 257/767, 257/771, 257/59
• US Class Current: 257/771
• CPC Class Codes: G02F 1/136295 Materials; Compositions; Manufacture processes
• CPC Class Codes: H01L 23/53214 the principal metal being aluminium
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An electronic device is provided using wiring comprising aluminum to prevent hillock or whisker from generating, wherein the wiring contains oxygen atoms at a concentration of 8×10¹⁸ atoms·cm^-3 or less, carbon atoms at a concentration of 5×10¹⁸ atoms·cm^-3 or less, and nitrogen atoms at a concentration of 7×10¹⁷ atoms·cm^-3 or less; furthermore, a silicon nitride film is formed on the aluminum gate, and an anodic oxide film is formed on the side planes thereof.

Claims

1. An electronic device comprising a film pattern made of aluminum or a material containing aluminum as a principal component thereof, wherein,

the film made of aluminum or a material containing aluminum as a principal component contains oxygen atoms at a concentration of 8×

10¹⁸ atoms·

cm^-3 or less, carbon atoms at a concentration of 5×

10¹⁸ atoms·

cm^-3 or less, and nitrogen atoms at a concentration of 7×

10¹⁷ atoms·

cm^-3 or less.

2. A device according to claim 1, wherein an oxide film is formed on a side plane of the film pattern, and a silicon nitride film is formed on an upper plane of the film pattern.

3. A device according to claim 1, wherein an oxide film is formed in contact with a side plane of the film pattern.

4. A device according to claim 1, wherein a silicon nitride film is formed in contact with an upper plane of the film pattern, and a contact to the film pattern is formed via an aperture formed in the silicon nitride film.

5. A device according to claim 1, wherein a protrusion is formed on a surface of the film pattern, and a maximum height of the protrusion is 500 Å

or lower.