Method for high-speed programming of a nonvolatile semiconductor memory device

  • US 5,943,260 A
  • Filed: 02/20/1998
  • Issued: 08/24/1999
  • Est. Priority Date: 02/21/1997
  • Status: Expired due to Term
First Claim
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1. A method for programming a nonvolatile memory device having a plurality of memory cells grouped in a plurality of blocks, for storing multi-valued data represented as multi-valued threshold voltages, said method comprising the step of detecting a plurality of program data to be programmed in said memory cells in one of said blocks, and further, upon detecting a first value to be programmed in a first group of said memory cells in said one of blocks and a second value to be programmed in a second group of said memory cells in said one of blocks, the steps of consecutively applying a first programming voltage, which corresponds to said first value, to said first group and said second group maintained at a first potential, and applying a second programming voltage, which corresponds to said second value, to said second group.

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