Semiconductor power device

  • US 5,945,730 A
  • Filed: 02/05/1998
  • Issued: 08/31/1999
  • Est. Priority Date: 02/12/1997
  • Status: Expired due to Term
First Claim
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1. A semiconductor power device comprising:

  • first and second semiconductor regions,a plurality of first metal conductors coupled to the first semiconductor region, each of the plurality of first metal conductors having at least one bump in contact therewith,a plurality of second metal conductors coupled to the second semiconductor region, each of the plurality of second metal conductors having at least one bump in contact therewith, anda frame formed of high conductivity material, the frame comprising a plurality of first connection portions for connecting to the at least one bumps of the first metal conductors and a plurality of second connection portions for connecting to the at least one bumps of the second metal conductors, the frame providing external connections to the semiconductor regions of the device.

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