Solid-state image sensing apparatus and manufacturing method thereof

• US 5,952,714 A
• Filed: 06/16/1997
• Issued: 09/14/1999
• Est. Priority Date: 08/02/1995
• Status: Expired due to Term

• Current Assignee: Collabo Innovations, Inc. (Wi-LAN Inc.)
• Original Assignee: Matsushita Electric Corporation (Panasonic Holdings Corporation)
• Inventors: Sano, Yoshikazu, Terakawa, Sumio, Tsujii, Eiichi, Asaumi, Masaji, Chatani, Yoshikazu
• Primary Examiner(s): Ngo, Ngan V.
• Application Number:
  US08/809,845
• Time in Patent Office: 820 Days
• Field of Search: 257/680, 257/686, 257/688, 257/689, 257/700, 257/724, 257/725
• US Class Current: 257/680
• CPC Class Codes: H01L 2224/16245 the item being metallic
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/148 Charge coupled imagers individual charge coupled devices H01L29/765
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/15153 the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/15165 Monolayer substrate
• CPC Class Codes: H01L 2924/1815 Shape
• CPC Class Codes: H01L 31/02002 Arrangements for conducting electric current to or from the device in operations
• CPC Class Codes: H01L 31/0203 Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80

Abstract

A lead frame 24 comprising an inner lead 22 and outer lead 23 is sealingly filled from a through-hole into a package 21. A CCD chip 27 is inserted from an inlet 26 into the package 21. An electrode pad 28 is connected to the inner lead 22 via a bump 29 to complete an optical positioning and an electrical connection, then the positions of these components are fixed by glue. As a result, a solid-state image sensing apparatus can be manufactured at a low cost, and an accurate positioning can be realized. Thus, the solid-state image sensing apparatus can be employed to a video camera of high quality picture to reproduce vivid colors and fine pictures.

Claims

1. A solid-state image sensing apparatus comprising:

a package having a through hole therein, openings on both end faces thereof, and different opening areas of said openings,

a lead frame comprising inner leads and outer leads, said lead frame being sealed in said package, and

a solid-state image sensing device mounted in said package by being inserted from an inlet of said opening which has a wider area, and thereby sealing said through hole, said solid-state image sensing device being secured to said package via an adhesive.

2. A solid-state image apparatus comprising:

a package comprising a main body having a through hole therein, said main body having a top surface and a bottom surface, said package further comprising a ledge formed on said main body so as to extend inwardly toward the center of said through hole, said ledge comprising an upper surface and a lower surface;

a lead frame comprising inner leads and outer leads, said lead frame being sealed in said package such that said inner leads extend inwardly from said main body so as to be adjacent said lower surface of said ledge; and

a solid-state image sensing device having an upper surface and a lower surface and a plurality of electrode pads disposed on said upper surface, each of said plurality of electrode pads coupled to one of said inner leads;

said solid-state image sensing device being secured to said main body of said package via an adhesive.

3. The solid-state image sensing apparatus of claim 2, wherein each of the electrode pads is connected to the inner lead via a bump.

4. The solid-state image sensing apparatus of claim 2, wherein each of the electrode pads is connected to the inner lead via an anisotropic conductor having only vertical conductivity.

5. The solid-state image sensing apparatus of claim 2, wherein a tip of the inner lead to which the electrode pad is connected extends beyond said ledge.

6. A solid-state image sensing apparatus comprising:

a package having a through hole therein, openings on both end faces thereof, and different opening areas of said openings,

a lead frame comprising inner leads and outer leads, said lead frame being sealed in said package,

a substrate on which a solid-state image sensing device and a peripheral circuit chip are mounted being inserted into the package from a wider opening thereof, and

an electrode pad of said substrate being connected to said inner lead exposed from around a smaller opening of said package,

said substrate being secured to said package via an adhesive.

8. The solid state image sensing apparatus of claim 6 or claim 7, wherein a shading film covers an entire upper surface of said substrate except an upper surface of the solid-state image sensing device.

9. The solid-state image sensing apparatus of claim 6 or claim 7, wherein an electrode pad formed on the substrate is connected to the inner lead via a bump.

10. The solid-state image sensing apparatus of claim 6 or claim 7, wherein an electrode pad formed on the substrate is connected to the inner lead via an anisotropic conductor which has only vertical conductivity.

11. The solid-state image sensing apparatus of claim 6 or claim 7, wherein an electrode pad formed on the substrate is connected to the inner lead at an outer portion of said lead, said outer portion of said lead extending into the openings of the package.

7. A solid-state image sensing apparatus comprising:

a package having a through hole therein, openings on both end faces thereof, and different opening areas of said openings,

a lead frame comprising inner leads and outer leads, said lead frame being sealed in said package,

a semiconductor substrate having a solid-state image sensing device and a peripheral circuit chip disposed on an upper surface thereof, said semiconductor substrate being inserted into a plastic package via the larger of two openings formed in said package, and

an electrode pad of said semiconductor substrate being connected to the inner lead exposed from around the smaller opening of said package,

said semiconductor substrate being secured to said package via an adhesive.

12. A solid-state image sensing apparatus comprising:

a package having a through hole therein, openings on both end faces thereof, and different opening areas of said openings,

a lead frame comprising inner leads and outer leads, said lead frame being sealed in said package, and

a solid-state image sensing device and a peripheral circuit chip both mounted in said package, said solid-state image sensing device being connected to a first inner lead exposed beneath a first step surface formed in said package, said solid-state image sensing device being secured to said package via an adhesive, and said peripheral circuit chip being connected to a second inner lead exposed beneath a second step surface formed in said package, said peripheral circuit chip being secured to said package via an adhesive.

13. A manufacturing method of a solid-state image sensing apparatus comprising a package having a through hole therein, a lead frame comprising inner leads and outer leads, said lead frame being sealed in said package, and a solid-state image sensing device mounted in said package, said manufacturing method comprising the steps of:

inserting said solid-state image sensing device into said through hole,

connecting an electrode pad of the solid-state image sensing device inserted in the through hole to the inner lead via a bump or an anisotropic conductor having only vertical conductivity, while simultaneously adjusting the optical positioning of said solid-state image sensing device, and

securing said solid-state image sensing device to the package with an adhesive.

14. A manufacturing method of a solid-state image sensing apparatus comprising a package having a through hole therein, a lead frame comprising inner leads and outer leads, said lead frame being sealed in said package, and a solid-state image sensing device as well as a peripheral circuit chip mounted in said package, said manufacturing method comprising the steps of:

forming said solid-state image sensing device and a group of wirings on a semiconductor substrate,

mounting said peripheral circuit chip on the solid-state image sensing device to connect with said group of said semiconductor surface,

inserting said semiconductor substrate into the through hole,

connecting an electrode pad disposed on the semiconductor substrate to the inner lead via a bump or an anisotropic conductor having only vertical conductivity, while simultaneously adjusting the optical positioning of said solid-state image sensing device, and

securing the semiconductor substrate on which the solid-state image sensing device and the peripheral circuit chip are mounted to the package via an adhesive.

15. A manufacturing method of a solid-state image sensing apparatus comprising a package having a through hole therein, a lead frame comprising inner leads and outer leads, said lead frame being sealed in said package, and a solid-state image sensing device as well as a peripheral circuit chip mounted in said package, said manufacturing method comprising steps of:

mounting said solid-state image sensing device and said peripheral circuit chip on a substrate where a group of wirings is disposed in order to connect the solid-state image sensing device and the peripheral circuit chip to the group of wirings,

inserting the semiconductor substrate into the through hole,

connecting an electrode pad disposed on a periphery of the substrate to the inner lead via a bump or an anisotropic conductor having only vertical conductivity, while simultaneously adjusting the optical positioning of the solid-state image sensing device, and

securing the semiconductor substrate on which said solid-state image sensing device and said peripheral circuit chip are mounted to the package via an adhesive.

16. A manufacturing method of a solid-state image sensing apparatus comprising a package having a through hole therein, a lead frame comprising inner leads and outer leads, said lead frame being sealed in the package, and a solid-state image sensing device as well as a peripheral circuit chip mounted in said package, said manufacturing method comprising steps of:

inserting said solid-state image sensing device into the through hole,

connecting an electrode pad of the solid-state image sensing device to a first inner lead via a bump or an anisotropic conductor having only vertical conductivity, while simultaneously adjusting the optical positioning of the solid-state image sensing device, said first inner lead being disposed beneath a first step surface formed in said package,

securing the solid-state image sensing device to the package via an adhesive,

inserting the peripheral circuit chip into the through hole,

connecting an electrode pad of the peripheral circuit chip to a second inner lead via a bump or an anisotropic conductor having only vertical conductivity, to complete an electrical connection, said second inner lead being disposed beneath a second step surface formed in said package, and

securing the peripheral circuit chip to the package via an adhesive.