Process of making a glass semiconductor package

• US 5,958,100 A
• Filed: 07/31/1996
• Issued: 09/28/1999
• Est. Priority Date: 06/03/1993
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Farnworth, Warren M., Wood, Alan G.
• Primary Examiner(s): Griffin, Steven P.
• Application Number:
  US08/692,883
• Time in Patent Office: 1,154 Days
• Field of Search: 65/36, 65/45, 65/47, 65/48, 65/49, 65/59.1, 65/66, 65/83, 65/85, 65/137, 65/138, 65/DIG. 11, 65/122, 437/213, 437/219, 257/794, 257/787, 257/702, 257/723, 257/725, 264/272.17, 264/272.12, 264/272.11, 264/271.1, 438/127
• US Class Current: 65/47
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 23/291 Oxides or nitrides or carbides, e.g. ceramics, glass
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01012 Magnesium [Mg]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/207 Diameter ranges
• CPC Class Codes: Y10S 65/11 Encapsulating

Abstract

A process of making hermetically sealed glass semiconductor packages by injecting molding an electronic device within a body of molten thermoplastic glass which is solidified by cooling. The glass has a sealing temperature not over 350° C. and a CTE not over 110×10^-7 /°C. and may be made of tin-phosphorus oxyfluoride or lead sealing glasses.

Claims

1. A process of making a glass semiconductor package for an electronic device, comprising:

placing the electronic device in a mold;

injecting molten thermoplastic glass consisting essentially of a glass having a sealing temperature not over 350°

C. and a coefficient of thermal expansion not over 110×

10^-7 /°

C. into the mold to surround the electronic device with thermoplastic glass; and

solidifying the molten thermoplastic glass by cooling after the glass is injected into the mold.

2. A process of making a glass semiconductor package according to claim 1, wherein the thermoplastic glass is a sealing glass selected from the group consisting of:

(i) tin-phosphorus oxyflouride glass having a low transition temperature and a mill addition selected from the group consisting of molybdenum, tungsten, lead orthophosphate, magnesium, pyrophosphate, a magnesium pyrophosphate with at least a portion of the magnesium ions replaced by at least one cation selected from the group consisting of cobalt, arsenic, zinc, iron, aluminum and zirconium, and a crystallized phosphate glass consisting essentially of one or more cations selected from the group consisting of magnesium, cobalt, arsenic, zinc, iron, aluminum and zirconium; and

(ii) lead sealing glass and a mill addition of a pyrophosphate crystalline material selected from the group consisting of magnesium pyrophosphate, a magnesium pyrophosphate with at least a portion of the magnesium ions replaced by at least one cation selected from the group consisting of cobalt, arsenic, zinc, iron, aluminum and zirconium, and a crystallized phosphate glass consisting essentially of one or more cations selected from the group consisting of magnesium, cobalt, arsenic, zinc, iron, aluminum and zirconium.