Semiconductor device
First Claim
1. A semiconductor device comprising:
- reference voltage means for outputting a constant voltage;
voltage dividing means receptive of the constant voltage for dividing the constant voltage, and outputting a plurality of different currents, the voltage dividing means comprising a ladder resistor circuit having a substrate, an insulating film disposed on the substrate, a first polycrystal silicon film disposed on the insulating film, an interlayer insulating film disposed on the first polycrystal silicon film, and a second polycrystal silicon film disposed on the interlayer insulating film and electrically connected to the first polycrystal silicon film;
digital signal processing means receptive of the plurality of different currents from the voltage dividing means for processing the currents and outputting a plurality of voltages; and
voltage amplifying means receptive of at least a ground voltage and one of the voltages from the digital signal processing means for amplifying the voltage from the digital signal processing means.
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Accused Products
Abstract
A semiconductor device comprises a reference voltage device for outputting a constant voltage, a voltage dividing device receptive of the constant voltage for dividing the constant voltage and outputting different currents, a digital signal processing device receptive of the different currents outputted by the voltage dividing device and outputting voltages, and a voltage amplifying device receptive of at least a ground voltage and one of the voltages outputted by the digital signal processing device and outputting a signal produced by amplifying the voltage of the digital signal processing device. The voltage dividing device comprises a ladder resistor circuit having a substrate, an insulating film disposed on the substrate, a first polycrystal silicon film disposed on the insulating film, an interlayer insulating film disposed on the first polycrystal silicon film, and a second polycrystal silicon film disposed on the interlayer insulating film and electrically connected to the first polycrystal silicon film.
29 Citations
30 Claims
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1. A semiconductor device comprising:
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reference voltage means for outputting a constant voltage; voltage dividing means receptive of the constant voltage for dividing the constant voltage, and outputting a plurality of different currents, the voltage dividing means comprising a ladder resistor circuit having a substrate, an insulating film disposed on the substrate, a first polycrystal silicon film disposed on the insulating film, an interlayer insulating film disposed on the first polycrystal silicon film, and a second polycrystal silicon film disposed on the interlayer insulating film and electrically connected to the first polycrystal silicon film; digital signal processing means receptive of the plurality of different currents from the voltage dividing means for processing the currents and outputting a plurality of voltages; and voltage amplifying means receptive of at least a ground voltage and one of the voltages from the digital signal processing means for amplifying the voltage from the digital signal processing means. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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reference voltage means for outputting a constant voltage; voltage dividing means receptive of the constant voltage for dividing the constant voltage into a plurality of voltages, the voltage dividing means comprising a ladder resistor circuit having a substrate, an insulating film disposed on the substrate, a first polycrystal silicon film disposed on the insulating film, an interlayer insulating film disposed on the first polycrystal silicon film, and a second polycrystal silicon film disposed on the interlayer insulating film and electrically connected to the first polycrystal silicon film; a plurality of voltage comparing means each receptive of an analog voltage and one of the plurality of voltages from the voltage dividing means for comparing the analog voltage and the voltages from the voltage dividing means and outputting a plurality of voltages on the basis of the magnitudes of the compared voltages; and an encoder receptive of the plurality of voltages from the plurality of comparing means for comparing the plurality of voltages with each other and outputting a plurality of voltage signals. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A semiconductor device comprising:
- a substrate;
a first insulating film disposed on the substrate;
a first polycrystal silicon film disposed on the first insulating film and having a first thickness;
a second insulating film disposed on the first polycrystal silicon film; and
a second polycrystal silicon film disposed on the second insulating film and electrically connected to the first polycrystal silicon film, the second polycrystal silicon film having an impurity concentration of 1×
1015 to 5×
1019 atoms/cm3 and a second thickness of approximately 500 Å
which is smaller than the first thickness. - View Dependent Claims (26, 27, 28, 29, 30)
- a substrate;
Specification