Tunable-trimmable micro electro mechanical system (MEMS) capacitor

• US 5,959,516 A
• Filed: 01/08/1998
• Issued: 09/28/1999
• Est. Priority Date: 01/08/1998
• Status: Expired due to Term

• Current Assignee: Skyworks Solutions Incorporated
• Original Assignee: Rockwell Science Center LLC
• Inventors: Marcy, 5.sup.th, Henry O., Park, Sangtae, Mehrotra, Deepak, Pehlke, David R., Yao, Jun J., Bartlett, James L., Tham, J. L. Julian, Seabury, Charles W., Pedrotti, Kenneth D., Chang, Mau Chung F.
• Primary Examiner(s): GENSLER, PAUL L
• Application Number:
  US09/004,679
• Time in Patent Office: 628 Days
• Field of Search: 333/197, 333/205, 334/10, 334/14, 334/78-84, 361/272, 361/274.1, 361/277, 361/278, 361/281, 361/287
• US Class Current: 334/14
• CPC Class Codes: H01G 5/40 Structural combinations of variable capacitors with other electric elements not covered by this subclass, the structure mainly consisting of a capacitor, e.g. RC combinations
• CPC Class Codes: H03B 2201/0208 the means being an element with a variable capacitance, e.g. capacitance diode
• CPC Class Codes: H03B 2201/0216 the means being an element with a variable inductance
• CPC Class Codes: H03B 2201/025 the means being an electronic switch for switching in or out oscillator elements
• CPC Class Codes: H03J 2200/10 Tuning of a resonator by means of digitally controlled capacitor bank
• CPC Class Codes: H03J 3/20 of single resonant circuit by varying inductance only or capacitance only

Abstract

A high Q MEMS capacitor that can be continuously tuned with a large tuning ratio or reversibly trimmed using an electrostatic force. The tunable capacitor has a master/slave structure in which a control voltage is applied to the master (control) capacitor to set the capacitance of the slave (signal) capacitor to which an RF signal is applied via a suspended mechanical coupler. The master-slave structure reduces tuning error by reducing the signal capacitor'"'"'s surface area and increasing its spring constant, and may eliminate the need for discrete blocking inductors by electrically isolating the control and signal capacitors. The trimmable capacitor provides an electrostatic actuator that selectively engages a stopper with teeth on a tunable capacitor structure to fix the trimmed capacitance.

Claims

1. A tunable Micro Electro Mechanical System (MEMS) capacitor, comprising:

a substrate;

a control capacitor on said substrate, said control capacitor having a pair of opposing plates, at least one of said plates being suspended so that it moves in response to an electrostatic force produced by a fixed control voltage applied across said control capacitor;

a signal capacitor on said substrate, said signal capacitor having a pair of opposing plates, at least one of said plates being suspended so that it can move; and

a non-conductive mechanical coupler suspended above said substrate that slaves the motion of said signal capacitor'"'"'s movable plate to the motion of said control capacitor'"'"'s movable plate to tune the capacitance of said signal capacitor to a fixed value in response to said fixed control voltage, said signal capacitor having a pair of terminals connected across its pair of opposing plates across which said tuned capacitance is taken, said mechanical coupler electrically isolating said control capacitor from said signal capacitor.

2. The tunable MEMS capacitor of claim 1, wherein said control capacitor is an interdigitated capacitor whose plates have interdigitated fingers in which the moveable plate moves the signal capacitor'"'"'s moveable plate to set its capacitance, said interdigitated fingers having a symmetric spacing where the electrostatic force is set by the fringing force between the end of the fingers and opposing plate because the electrostatic forces between fingers cancels out so that the electrostatic force is proportional to the control voltage.

3. The tunable MEMS capacitor of claim 1, wherein said signal voltage produces an electrostatic force on the signal capacitor'"'"'s movable plate that is orthogonal to its direction of motion, said control capacitor'"'"'s movable plate being suspended from a flexure structure that exhibits a small spring constant in the direction of motion that allows a wide range of motion for tuning the signal capacitor, said mechanical coupler exhibiting a large spring constant in the direction of the electrostatic force produced by the signal voltage to resist deflection of the signal capacitor'"'"'s movable plate.

4. The tunable MEMS capacitor of claim 3, wherein said signal capacitor is a parallel-plate capacitor in which the control capacitor moves the signal capacitor'"'"'s moveable plate so as to change the signal capacitor'"'"'s surface area to tune its capacitance while maintaining a substantially constant spacing between the signal capacitor'"'"'s plates.

5. The tunable MEMS capacitor of claim 3, wherein said signal capacitor is an interdigitated capacitor whose plates have asymmetrically spaced interdigitated fingers where the electrostatic force between fingers dominates the fringing force between the end of the fingers and opposing plate so that the direction of motion is orthogonal to the direction of the electrostatic force.

6. A tunable Micro Electro Mechanical System (MEMS) capacitor, comprising:

a substrate;

a control capacitor on said substrate, said control capacitor having a pair of opposing plates, at least one of said plates being suspended so that it moves in response to an electrostatic force produced by a control voltage applied across said control capacitor;

a signal capacitor on said substrate that responds to a signal voltage, said signal capacitor having a pair of opposing plates, at least one of said plates being suspended so that it can move; and

a mechanical coupler suspended above said substrate that slaves the motion of said signal capacitor'"'"'s movable plate to the motion of said control capacitor'"'"'s movable plate to tune the capacitance of said signal capacitor, wherein the electrostatic forces exerted on the control and signal capacitors'"'"' movable plates are proportional to their respective overlapping surface areas A_C and A_S, said signal capacitor'"'"'s surface area A_S being smaller than said control capacitor'"'"'s surface area A_C so that the electrostatic force exerted on the signal capacitor in response to the signal voltage is smaller than it would be were the signal and control capacitors integrated into a single capacitor that responded to both said control and signal voltages, said reduced electrostatic force reducing the deflection of said signal capacitor'"'"'s movable plate in response to the signal voltage and thus reducing the distortion of its capacitance.

7. A tunable Micro Electro Mechanical System (MEMS) capacitor, comprising:

a substrate;

a control capacitor on said substrate, said control capacitor having a pair of opposing plates, at least one of said plates being suspended so that it moves in response to an electrostatic force produced by a control voltage applied across said control capacitor;

a signal capacitor on said substrate that responds to a signal voltage, said signal capacitor having a pair of opposing plates, at least one of said plates being suspended so that it can move; and

a mechanical coupler suspended above said substrate that slaves the motion of said signal capacitor'"'"'s movable plate to the motion of said control capacitor'"'"'s movable plate to tune the capacitance of said signal capacitor, wherein said substrate is a Silicon-On-Insulator (SOI) substrate comprising a silicon insulator layer on which said MEMS capacitor is formed, a silicon dioxide layer for releasing the MEMS capacitor'"'"'s moveable parts from said insulator layer, and a top silicon layer in which said control capacitor is defined, said mechanical coupler being formed in a deposition layer that is less conductive than said top silicon to electrically isolate said control and signal capacitors.

8. A tunable Micro Electro Mechanical System (MEMS) capacitor, comprising:

a substrate;

a control capacitor on said substrate, said control capacitor having a pair of opposing plates, at least one of said plates being suspended so that it moves in response to an electrostatic force produced by a control voltage applied across said control capacitor;

a signal capacitor on said substrate that responds to a signal voltage, said signal capacitor having a pair of opposing plates, at least one of said plates being suspended so that it can move; and

a mechanical coupler suspended above said substrate that slaves the motion of said signal capacitor'"'"'s movable plate to the motion of said control capacitor'"'"'s movable plate to tune the capacitance of said signal capacitor, wherein said substrate is a Silicon-On-Insulator (SOI) substrate comprising a silicon insulator layer having a cavity etched therethrough, a patterned silicon dioxide layer, and a top silicon layer in which said control capacitor, mechanical coupler, and signal capacitor are defined so that they are anchored to said insulator layer and suspended over the cavity, said control and signal capacitors further comprising a metal deposition layer that increases their conductivity relative to the mechanical coupler so that said control and signal capacitors are electrically isolated.

9. A tunable Micro Electro Mechanical System (MEMS) capacitor, comprising:

a substrate;

a control capacitor on said substrate, said control capacitor having a pair of opposing plates, at least one of said plates being suspended so that it moves in response to an electrostatic force produced by a control voltage applied across said control capacitor;

a signal capacitor on said substrate that responds to a signal voltage, said signal capacitor having a pair of opposing plates, at least one of said plates being suspended so that it can move; and

a mechanical coupler suspended above said substrate that slaves the motion of said signal capacitor'"'"'s movable plate to the motion of said control capacitor'"'"'s movable plate to tune the capacitance of said signal capacitor, wherein said substrate is a Silicon-On-Insulator (SOI) substrate comprising a silicon insulator layer having a cavity etched therethrough, a silicon dioxide layer in which said mechanical coupler is patterned, and a top silicon layer in which said control capacitor and signal capacitor are defined so that they are anchored to said insulator layer and suspended over the cavity, said control and signal capacitors further comprising a metal deposition layer that increases their conductivity relative to the mechanical coupler so that said control and signal capacitors are electrically isolated.

10. The tunable MEMS capacitor of claim 9, wherein said substrate is a Silicon-On-Insulator (SOI) substrate comprising a silicon substrate having a cavity etched there through, a patterned silicon dioxide layer, and a top silicon layer in which said flexure structure, control capacitor, mechanical coupler, and signal capacitor are defined so that they are anchored to said substrate and suspended over the cavity, said control and signal capacitors further comprising a metal deposition layer that increases their conductivity relative to the mechanical coupler so that said control and signal capacitors are electrically isolated.

11. A tunable Micro Electro Mechanical System (MEMS) capacitor, comprising:

a substrate;

a flexure structure that is anchored to and suspended above said substrate so that it flexes along a direction of motion;

a control capacitor on said substrate, said control capacitor having a pair of opposing plates, at least one of said plates being connected to said flexure structure so that it is movable in response to an electrostatic force produced by a control voltage across said control capacitor, said force being proportional to the plates'"'"' overlapping surface area A_C ;

a signal capacitor on said substrate that receives a signal voltage, said signal capacitor having a pair of opposing plates, at least one of said plates being suspended so that it is movable; and

a mechanical coupler that slaves the motion of said signal capacitor'"'"'s movable plate to the motion of said control capacitor'"'"'s movable plate to set the capacitance of said signal capacitor and electrically isolates the signal capacitor from the control capacitor,

said flexure structure exhibiting a small spring constant in the direction of motion to allow a wide range of motion for tuning the signal capacitor, and

said signal capacitor'"'"'s surface area A_S being smaller then the control capacitor'"'"'s surface area A_C and the spring constant of said isolator in the direction of an electrostatic force produced by said signal voltage being large to reduce the sensitivity of said signal capacitor'"'"'s moveable plate to the signal voltage.

12. The tunable MEMS capacitor of claim 11, wherein said signal capacitor is a parallel-plate capacitor in which the control capacitor moves the signal capacitor'"'"'s moveable plate so as to change the signal capacitor'"'"'s surface area A_S to set its capacitance while maintaining a substantially constant spacing between the signal capacitor'"'"'s plates.

13. The tunable MEMS capacitor of claim 11, wherein said signal capacitor is an interdigitated capacitor whose plates have asymmetrically spaced interdigitated fingers where electrostatic force between fingers dominates the fringing force between the end of the fingers and opposing plate so that the direction of motion is orthogonal to the direction of the electrostatic force.

14. A tunable Micro Electro Mechanical System (MEMS) capacitor, comprising:

a Silicon-On-Insulator (SOI) substrate comprising a silicon insulator layer having a cavity etched therethrough, a patterned silicon dioxide layer, and a top silicon layer in which are patterned;

a control capacitor comprising;

a first contact on said substrate adjacent said cavity;

a first plurality of fingers that extend from said first contact over said cavity;

second and third contacts on said substrate on opposite sides of said cavity;

a first beam that is connected between said second and third contacts and suspended over said cavity;

a second plurality of fingers that extend from said first beam so that they are interdigitated with the first plurality of fingers that extend from said first contact, said first beam being flexible along a direction of motion parallel to its fingers so that it moves in response to an electrostatic force produced by a control voltage applied across said control capacitor;

a signal capacitor that receives a signal voltage, comprising;

a fourth contact on said substrate adjacent said cavity;

a third plurality of fingers that extend from said fourth contact over said cavity;

fifth and sixth contacts on said substrate on opposite sides of said cavity;

a second beam that is connected between said fifth and sixth contacts and suspended over said cavity;

a fourth plurality of fingers that extend from said second beam so that they are interdigitated with the third plurality of fingers that extend from said fourth contact;

a mechanical coupler suspended above the cavity in said substrate between said first and second beams that slaves the motion of said signal capacitor'"'"'s second beam to the motion of said control capacitor'"'"'s first beam to tune the capacitance of said signal capacitor; and

a deposition layer on said fingers that increases the conductivity of the control and signal capacitors with respect to said mechanical coupler so that they are electrically isolated.

15. The tunable MEMS capacitor of claim 14, wherein said signal capacitor'"'"'s third and fourth plurality of fingers are asymmetrically spaced so that the electrostatic force produced by the signal voltage is predominantly between the fingers and orthogonal to the direction of motion, the spring constants of said first and second beams being small in the direction of motion to allow a wide range of motion for tuning the signal capacitor and large in the direction of the electrostatic force on the signal capacitor'"'"'s fingers to reduce the deflection of the signal capacitance due to the signal voltage.

16. The tunable MEMS capacitor of claim 14, wherein the electrostatic forces exerted on the control and signal capacitors'"'"' movable plates are proportional to the respective overlapping surface areas A_C and A_S of their fingers, said signal capacitor'"'"'s surface area A_S being smaller than said control capacitor'"'"'s surface area A_C so that the electrostatic force exerted on the signal capacitor in response to the signal voltage is smaller than it would be were the signal and control capacitors integrated into a single capacitor that responded to both said control and signal voltages, said reduced electrostatic force reducing the deflection of the signal capacitance due to the signal voltage.

17. A trimmable Micro Electro Mechanical System (MEMS) capacitor, comprising:

a substrate;

a flexure structure that is anchored to and suspended above said substrate so that it flexes along a direction of motion;

a signal capacitor on said substrate that receives a signal voltage, said signal capacitor having a pair of opposing plates, at least one of said plates being connected to said flexure structure so that it can move in response to a control voltage to set the capacitance of said signal capacitor;

a plurality of teeth that are coupled to and move with said moving plate; and

an electrostatic actuator on said substrate, said actuator responding to a switch voltage to disengage a stopper and allow said control voltage to trim the signal capacitor'"'"'s capacitance and then reengage said stopper in said teeth such that the movable plate is fixed.

18. The trimmable MEMS capacitor of claim 17, wherein said actuator comprises a tunable capacitor in which the stopper is attached to a moveable plate that is suspended from a flexure mechanism so that it opposes a fixed plate, said switch voltage creating an electrostatic force between the plates that causes the moveable plate to move against the spring force to engage and disengage the stopper.

19. The trimmable MEMS capacitor of claim 17, wherein said signal capacitor comprises:

a master capacitor on said substrate, said master capacitor having a pair of opposing plates, at least one of said plates being suspended so that it is movable in response to an electrostatic force produced by a control voltage applied across said master capacitor;

a slave capacitor on said substrate that responds to the signal voltage, said slave capacitor having a pair of opposing plates, at least one of said plates being suspended so that it is movable; and

a mechanical coupler suspended above said substrate that slaves the motion of said slave capacitor'"'"'s movable plate to the motion of said master capacitor'"'"'s movable plate to trim the capacitance of said signal capacitor while electrically isolating the signal capacitor from the control capacitor.

20. The trimmable MEMS capacitor of claim 17, wherein said substrate is a Silicon-On-Insulator (SOI) substrate comprising a silicon substrate having a cavity etched there through, a patterned silicon dioxide layer, and a top silicon layer in which said signal capacitor, teeth and electrostatic actuator are defined so that they are anchored to said substrate and suspended over the cavity.

21. A noise compensated Micro Electro Mechanical System (MEMS) capacitor, comprising:

a substrate;

a flexure structure that is anchored to and suspended above said substrate so that it flexes along a direction of motion;

a signal capacitor on said substrate that receives a signal voltage, said signal capacitor having a pair of opposing plates, at least one of said plates being connected to said flexure structure so that it can move in response to a control voltage to set the capacitance of said signal capacitor;

a noise sensor for detecting extraneous mechanical motion that would deflect the signal capacitor'"'"'s moveable plate thereby distorting its capacitance; and

a signal conditioner that feeds back the detected motion to the signal capacitor to compensate for the extraneous mechanic motion.

22. The noise compensated MEMS capacitor of claim 21, wherein said signal conditioner adjusts the control voltage to directly null the effect of said extraneous motion on the signal capacitor'"'"'s moveable plate.

23. The noise compensated MEMS capacitor of claim 21, wherein said signal conditioner computes the capacitance induced in said signal capacitor by said extraneous motion and subtracts it from the capacitance of the signal capacitor.

24. The nosie compensated MEMS capacitor of claim 21, wherein said noise sensor comprises a tunable MEMS capacitor whose capacitance is modulated by external vibrations.