Metal plug local interconnect

  • US 5,965,924 A
  • Filed: 07/24/1997
  • Issued: 10/12/1999
  • Est. Priority Date: 11/22/1995
  • Status: Expired due to Term
First Claim
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1. A semiconductor structure comprising:

  • a silicon substrate having a top surface,a diffusion region formed in said substrate adjacent to said top surface,a gate formed on the top surface of said substrate juxtaposed to but not contacting said diffusion region,a sidewall spacer adjacent to said gate and disposed above said diffusion region,an insulator layer substantially covering said gate and said diffusion region, anda conducting plug at least partially filling a via in said insulation layer that exposes said sidewall spacer in the absence of said conducting plug, said conducting plug providing direct electrical communication between said gate and said diffusion region.

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