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Process for producing semiconductor article

  • US 5,966,620 A
  • Filed: 11/14/1997
  • Issued: 10/12/1999
  • Est. Priority Date: 11/15/1996
  • Status: Expired due to Term
First Claim
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1. A process for producing a semiconductor article comprising steps of preparing a first substrate comprised of a silicon substrate, an epitaxial semiconductor layer formed on the silicon substrate, and an ion implantation layer formed in at least one of the silicon substrate, wherein said silicon substrate is not a porous region, and the epitaxial semiconductor layer, wherein said epitaxial semiconductor layer is not a porous region bonding the first substrate to a second substrate to obtain a multiple layer structure with the epitaxial semiconductor layer placed inside;

  • and separating the multiple layer structure at the ion implantation layer.

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