Organic substrate provided with a light absorptive antireflection film and process for its production

• US 5,976,684 A
• Filed: 12/12/1997
• Issued: 11/02/1999
• Est. Priority Date: 12/17/1996
• Status: Expired due to Fees

• Current Assignee: Asahi Glass Company, Limited (AGC, Inc.)
• Original Assignee: Asahi Glass Company, Limited (AGC, Inc.)
• Inventors: Yamada, Tomohiro, Ohsaki, Hisashi, Oyama, Takuji, Higuchi, Toshihiko
• Primary Examiner(s): DIXON, MERRICK L
• Application Number:
  US08/990,091
• Time in Patent Office: 690 Days
• Field of Search: 428/432, 428/698, 428/697, 428/701, 428/216, 428/212, 427/226, 427/108, 427/126.2, 427/126.3, 427/165, 350/444, 350/642, 350/164, 350/166, 350/438, 350/439, 359/589, 359/586, 359/580, 359/359
• US Class Current: 428/216
• CPC Class Codes: C23C 14/022 by means of bombardment with energetic particles or radiation
• CPC Class Codes: C23C 14/0641 Nitrides C23C14/0617 takes precedence
• CPC Class Codes: C23C 14/0652 Silicon nitride
• CPC Class Codes: C23C 14/0676 Oxynitrides
• CPC Class Codes: G02B 1/113 using inorganic layer materials only
• CPC Class Codes: Y10T 428/24942 including components having same physical characteristic in differing degree
• CPC Class Codes: Y10T 428/24975 No layer or component greater than 5 mils thick

Abstract

An organic substrate provided with a light absorptive antireflection film, which contains an organic substrate, and a light absorbing film and a low refractive index film formed in this order on the substrate, to reduce reflection of incident light from the low refractive index film side, wherein the organic substrate has its surface plasma-treated, and a layer made essentially of at least one member selected from the group consisting of silicon, a silicon nitride, a silicon oxide and a silicon oxy-nitride, is formed between the plasma-treated substrate surface and the light absorbing film.

Claims

1. An organic substrate provided with a light absorptive antireflection film, which comprises an organic substrate, and a light absorbing film and a low refractive index film formed in this order on the substrate, to reduce reflection of incident light from the low refractive index film side, wherein the organic substrate has a plasma-treated surface, and a layer made essentially of at least one member selected from the group consisting of silicon, a silicon nitride, a silicon oxide and a silicon oxy-nitride, is formed between the plasma-treated substrate surface and the light absorbing film.

2. The organic substrate provided with a light absorptive antireflection film according to claim 1, wherein the geometrical film thickness of the light absorbing film is from 2 to 20 nm.

3. The organic substrate provided with a light absorptive antireflection film according to claim 1, wherein the light absorbing film is a film consisting essentially of a nitride of at least one metal selected from the group consisting of titanium, zirconium and hafnium.

4. The organic substrate provided with a light absorptive antireflection film according to claim 1, wherein the light absorbing film is a film containing gold or copper or a combination thereof.

5. The organic substrate provided with a light absorptive antireflection film according to claim 1, wherein the low refractive index film is a film consisting essentially of a silicon oxide.

6. The organic substrate provided with a light absorptive antireflection film according to claim 1, wherein the geometrical film thickness of the layer made essentially of at least one member selected from the group consisting of silicon, a silicon nitride, a silicon oxide and a silicon oxy-nitride, is from 0.5 to 10 nm.

7. The organic substrate provided with a light absorptive antireflection film according to claim 1, wherein the layer made essentially of at least one member selected from the group consisting of silicon, a silicon nitride, a silicon oxide and a silicon oxy-nitride, is a layer made essentially of a silicon nitride.

8. The organic substrate provided with a light absorptive antireflection film according to claim 1, wherein an antioxidation layer made essentially of a silicon nitride or an aluminum nitride or a combination thereof, is formed in a geometrical film thickness of from 0.5 to 20 nm between the light absorbent film and the low refractive index film.

9. The organic substrate provided with a light absorptive antireflection film according to claim 1, wherein the organic substrate is made of polyethylene terephthalate or polycarbonate.

10. The organic substrate provided with a light absorptive antireflection film according to claim 1, wherein the organic substrate has a hard coat layer formed on a substrate.

11. The organic substrate provided with the light absorptive antireflection film according to claim 10, wherein the absolute value of the difference between the refractive index of the organic substrate and the refractive index of the hard coat layer is at most 0.05.

14. The organic substrate provided with a light absorptive antireflection film according to claim 1, wherein said low refractive index film has a refractive index of at most 1.55 with an optical film thickness of from 60 to 110 nm.

15. The organic substrate provided with a light absorptive antireflection film according to claim 14, wherein the low refractive index film has a refractive index of at most 1.50, with an optical film thickness of from 70 to 100 nm.

16. The organic substrate provided with a light antireflection film according to claim 1, wherein said light antireflection film has a light absorption of from 10 to 35%.

17. The organic substrate provided with a light antireflection film according to claim 1, wherein reflectance of incident light from the low refractive index film side is at most 0.6% in a wavelength range of from 430 to 650 nm.

18. The organic substrate provided with a light antireflection film according to claim 6, wherein said geometrical film thickness of said layer is from 0.5 to 5 nm.

19. The organic substrate provided with a light antireflection film according to claim 11, wherein said hard coat layer is an acrylic resin containing particles selected from the group consisting of antimony (V) oxide, titanium (IV) oxide, yttrium (III) oxide, zirconium (IV) oxide, tin (IV) oxide, indium-tin oxide (ITO), lauthanum (III) oxide, aluminum (III) oxide, zinc (II) oxide, and cerium (IV) oxide.

12. A process for producing an organic substrate provided with a light absorptive antireflection film, which comprises subjecting an organic substrate surface to plasma treatment, and forming a layer made essentially of at least one member selected from the group consisting of silicon, a silicon nitride, a silicon oxide and a silicon oxy-nitride, a light absorbing film and a low refractive index film in this order on the plasma-treated surface.

13. The process for producing an organic substrate provided with a light absorptive antireflection film according to claim 12, wherein the plasma treatment is carried out in such a manner that the organic substrate is set in a vacuum chamber, then the interior of the chamber is made to be a non-oxidizing atmosphere, and a radio frequency electric power is applied to an electrode disposed on the rear side of the organic substrate, to carry out plasma treatment to satisfy a condition of 2P·

t/(V·

e·

π

)≧

5×

10¹⁵, where P is the power density (W/cm²) applied to the surface of the organic substrate, -V is the self bias potential (volt) of the electrode, t is the treating time (seconds), and e is an elementary electric charge of 1.6×

10^-19 (C).