High efficiency photovoltaic device

• US 5,977,476 A
• Filed: 10/16/1996
• Issued: 11/02/1999
• Est. Priority Date: 10/16/1996
• Status: Expired due to Term

• Current Assignee: United Solar Systems Corp.
• Original Assignee: United Solar Systems Corp.
• Inventors: Xu, Xi Xiang, Guha, Subhendu, Yang, Chi C.
• Primary Examiner(s): CHAPMAN, MARK A
• Application Number:
  US08/731,497
• Time in Patent Office: 1,112 Days
• Field of Search: 136/249 TJ, 136/258, 136/255
• US Class Current: 136/249
• CPC Class Codes: H01L 31/03685 including microcrystalline silicon, uc-Si
• CPC Class Codes: H01L 31/075 the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
• CPC Class Codes: H01L 31/076 Multiple junction or tandem solar cells
• CPC Class Codes: Y02E 10/545 Microcrystalline silicon PV cells
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells

Abstract

An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.

Claims

1. A tandem photovoltaic device of the type comprising:

a first and a second N-I-P type photovoltaic cell stacked in an optical and electrical series relationship, each cell including a body of substantially intrinsic semiconductor material interposed between a body of N doped semiconductor material and a body of P doped semiconductor material;

wherein at least one of said first and second cells includes a multi-layered N doped body comprising a first layer of amorphous, N doped semiconductor material disposed in overlying contact with the intrinsic body of said cell, and a layer of microcrystalline, N doped semiconductor material disposed upon said first layer of amorphous, N doped semiconductor material, and separated from said substantially intrinsic body thereby.

2. A tandem photovoltaic device as in claim 1, wherein said multi-layered N doped body is a tri-layered body, further including a second layer of amorphous, N doped semiconductor material disposed in overlying contact with said layer of microcrystalline, N doped semiconductor material, and separated from said first layer of amorphous, N doped semiconductor material thereby.

3. A tandem photovoltaic device as in claim 1, wherein the substantially intrinsic semiconductor material of said first and second photovoltaic cells is an amorphous semiconductor material.

4. A tandem photovoltaic device as in claim 1, wherein the intrinsic body of said first and second photovoltaic cells is comprised of a hydrogenated alloy of a group IV element.

5. A tandem photovoltaic device as in claim 1, wherein the intrinsic body of said first and second photovoltaic cell is comprised of a hydrogenated alloy of a material selected from the group consisting of:

silicon, germanium, and combinations thereof.

6. A tandem photovoltaic device as in claim 1, wherein the body of P doped semiconductor material and the body of N doped semiconductor material of each of said cells is comprised of a silicon alloy material.

7. A tandem photovoltaic device as in claim 1, further including a third N-I-P type photovoltaic cell stacked in an optical and electrical series relationship with said first and said second N-I-P type photovoltaic cells.

8. A tandem photovoltaic device as in claim 1, wherein the body of substantially intrinsic semiconductor material of the first cell has a band gap which is different from a band gap of the body of substantially intrinsic semiconductor material of the second cell.

9. A tandem photovoltaic device as in claim 1, further including an electrically conductive substrate which supports said first and second cells thereupon and which provides one electrode of said tandem photovoltaic device;

and,

a body of top electrode material disposed in electrical communication with said first and second photovoltaic cells, and spaced apart from said substrate thereby.

10. A tandem photovoltaic device as in claim 9, wherein said substrate includes a metallic layer, said metallic layer providing the substrate electrode of said device.

11. A tandem photovoltaic device as in claim 9, wherein said substrate comprises a light transparent substrate having a body of transparent, electrically conductive material supported thereupon, said transparent, electrically conductive material providing the substrate electrode of said device.

12. An N-I-P type photovoltaic cell of the type comprising a body of substantially intrinsic semiconductor material interposed between a body of N doped semiconductor material and a body of P doped semiconductor material wherein the body of N doped semiconductor material is a multi-layered N doped body having a first layer of amorphous, N doped semiconductor material disposed in overlying contact with the body of substantially intrinsic semiconductor material, and a layer of microcrystalline, N doped semiconductor material disposed upon said first layer of amorphous N doped semiconductor material, and separated from said substantially intrinsic body thereby.

13. An N-I-P type photovoltaic cell as in claim 12, wherein said multi-layered N doped body is a tri-layered body further including a second layer of amorphous, N doped semiconductor material disposed in overlying contact with said layer of microcrystalline, N doped semiconductor material and separated from said first layer of amorphous, N doped semiconductor material thereby.