Optical semiconductor device and a method of manufacturing the same

• US 5,987,046 A
• Filed: 04/02/1997
• Issued: 11/16/1999
• Est. Priority Date: 08/31/1993
• Status: Expired due to Fees

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Fujii, Takuya, Kobayashi, Hirohiko, Soda, Haruhisa, Ekawa, Mitsuru, Tabuchi, Haruhiko, Okazaki, Nirou, Ogita, Shouichi
• Primary Examiner(s): Bovernick, Rodney
• Assistant Examiner(s): Leung, Quyen Phan
• Application Number:
  US08/826,533
• Time in Patent Office: 958 Days
• Field of Search: 385/14, 385/132, 385/131, 372/43, 372/45, 372/46
• US Class Current: 372/45.01
• CPC Class Codes: G02B 2006/12128 Multiple Quantum Well [MQW]
• CPC Class Codes: G02B 2006/12195 Tapering
• CPC Class Codes: G02B 6/12004 Combinations of two or more optical elements
• CPC Class Codes: G02B 6/305 and having an integrated mode-size expanding section, e.g. tapered waveguide
• CPC Class Codes: H01S 5/026 Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers stabilisation of output H01S5/06
• CPC Class Codes: H01S 5/0265 Intensity modulators intra-cavity modulators H01S5/0625
• CPC Class Codes: H01S 5/1014 Tapered waveguide, e.g. spotsize converter H01S5/1064 takes precedence
• CPC Class Codes: H01S 5/106 varying thickness along the optical axis
• CPC Class Codes: H01S 5/1064 varying width along the optical axis
• CPC Class Codes: H01S 5/20 Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
• CPC Class Codes: H01S 5/2272 grown by a mask induced selective growth
• CPC Class Codes: H01S 5/3428 layer orientation perpendicular to the substrate
• CPC Class Codes: Y10S 438/942 Masking

Abstract

An optical semiconductor device of the present invention is provided with a core layer having a quantum well layer in that film thickness gets thinner from a inner region to an end portion in an optical waveguide region.

Claims

1. An optical semiconductor device comprising an optical beam diameter converting waveguide including:

a semiconductor substrate;

a quantum well layer formed above the semiconductor substrate, the quantum well layer having at least one well layer and two barrier layers sandwiching the well layer, and the quantum well layer forming at least a part of a core layer of the optical beam diameter converting waveguide, wherein each of the well layer and the barrier layers reduce their film thickness gradually from a first end to a second end of the quantum well layer; and

a cladding layer covering the quantum well layer;

wherein the quantum well layer increases in width thereof gradually from the first end to the second end of the quantum well layer.

2. An optical semiconductor device comprising an optical beam diameter converting waveguide including:

a semiconductor substrate;

a quantum well layer formed above the semiconductor substrate, the quantum well layer having at least one well layer and two barrier layers sandwiching the well layer, and the quantum well layer forming at least a part of a core layer of the optical beam diameter converting waveguide, wherein each of the well layer and the barrier layers reduce their film thickness gradually from a first end to a second end of the quantum well layer; and

a cladding layer covering the quantum well layer;

wherein a thickness of the quantum well layer at the first end is at least twice as that of the quantum well layer at the second end.

3. The optical semiconductor device according to claim 2, wherein the quantum well layer is comprised of a plurality of well layers and a plurality of barrier layers, each well layer and each barrier layer being alternately layered.

4. The optical semiconductor device according to claim 2, further comprising:

a first guide layer formed between the semiconductor substrate and the quantum well layer; and

a second guide layer formed between the quantum well layer and the cladding layer;

wherein said first and second guide layers having an energy band gap which is larger than that of a well layer and lower than those of the semiconductor substrate and the cladding layer.

6. The optical semiconductor device according to claim 2, wherein a ratio of width at the first and the second ends of the quantum well layer is 0.8 and 1.2.

7. The optical semiconductor device according to claim 4, wherein the well layer is made of InGaAs, the barrier layers are made of InGaAsP, the first and the second guide layers are made of InGaAsP, and the semiconductor substrate and the cladding layer are made of InP.

8. The optical semiconductor device according to claim 2, wherein the well layer is made of InGaAsP of a first composition ratio and the barrier layers are made of InGaAsP of a second composition ratio which is different from the first composition ratio.

9. The optical semiconductor device according to claim 2, wherein the well layer is made of GaAs, and the barrier layers are made of AlGaAs.

10. The optical semiconductor device according to claim 2, wherein the well layer is made of GaInP and the barrier layers are made of AlGaInP.

5. An optical semiconductor device comprising an optical beam diameter converting waveguide including:

a semiconductor substrate;

a quantum well layer formed above the semiconductor substrate, the quantum well layer having at least one well layer and two barrier layers sandwiching the well layer, and the quantum well layer forming at least a part of a core layer of the optical beam diameter converting waveguide, wherein each of the well layer and the barrier layers reduce their film thickness gradually from a first end to a second end of the quantum well layer;

a cladding layer covering the quantum well layer;

a first guide layer formed between the semiconductor substrate and the quantum well layer; and

a second guide layer formed between the quantum well layer and the cladding layer;

wherein said first and second guide layers having an energy band gap which is larger than that of a well layer and lower than those of the semiconductor substrate and the cladding layer;

wherein the first and the second guide layers reduce their film thickness gradually from the first end to the second end of the quantum well layer.

11. An optical semiconductor device, comprising:

a semiconductor substrate;

a quantum well layer formed above the semiconductor substrate, the quantum well layer having an optical active region and a wave guide region and including at least one well layer and two barrier layers sandwiching the well layer, and the quantum well layer forming at least a part of a core layer of a wave guide, wherein the well layer in the wave guide region reduces its film thickness gradually from a first end of the wave guide region adjacent to the optical active region to a second end of the wave guide region;

a first cladding layer covering the quantum well layer;

a first electrode formed above the first cladding layer and over the optical active region; and

a second electrode formed on an under surface of the substrate under the optical active region;

a second cladding layer formed between the semiconductor substrate and the quantum well layer;

a first guide layer formed between the second cladding layer and the quantum well layer; and

a second guide layer formed between the quantum well layer and the first cladding layer;

wherein said first and second guide layers have an energy band gap which is larger than that of the well layer and lower than those of the first and the second cladding layers, and the first and the second guide layers reduce their film thickness gradually from the first end to the second end.

12. An optical semiconductor device comprising:

a semiconductor substrate;

a quantum well layer formed above the semiconductor substrate, the quantum well layer having an optical active region and a wave guide region and including at least one well layer and two barrier layers sandwiching the well layer, and the quantum well layer forming at least a part of a core layer of a wave guide, wherein the well layer in the wave guide region reduces its film thickness gradually from a first end of the wave guide region adjacent to the optical active region to a second end of the wave guide region;

a first cladding layer covering the quantum well layer;

a first electrode formed above the first cladding layer and over the optical active region; and

a second electrode formed on an under surface of the substrate under the optical active region;

wherein the quantum well layer of the wave guide region increases in width gradually from the first end to the second end.

13. An optical semiconductor device comprising:

a semiconductor substrate;

a quantum well layer formed above the semiconductor substrate, the quantum well layer having an optical active region and a wave guide region and including at least one well layer and two barrier layers sandwiching the well layer, and the quantum well layer, forming at least a part of a core layer of a wave guide, wherein the well layer in the wave guide region reduced its film thickness gradually from a first end of the wave guide region adjacent to the optical active region to a second end of the wave guide region;

a first cladding layer covering the quantum well layer;

a first electrode formed above the first cladding layer and over the active region;

a second electrode formed on an under surface of the substrate under the optical active region;

wherein a thickness of the quantum well at the first end is at least twice that at the second end.

14. The optical semiconductor device according to claim 13, wherein the quantum well layer is comprised of a plurality of well layers and a plurality of barrier layers, each well layer and each barrier layer being alternately layered.

15. The optical semiconductor device according to claim 13, further comprising a second cladding layer formed between the semiconductor substrate and the quantum well layer.

16. The optical semiconductor device according to claim 15, further comprising:

a first guide layer formed between the second cladding layer and the quantum well layer; and

a second guide layer formed between the quantum well layer and the first cladding layer;

wherein said first and second guide layers have an energy band gap which is larger than that of the well layer and lower than those of the first and the second cladding layers.

17. The optical semiconductor device according to claim 13, wherein the quantum well layer has substantially a stripe shape over the optical active region and the wave guide region, the stripe shape in which a ratio of width at the first and the second ends of the wave guide region is 0.8 to 1.2.

18. The optical semiconductor device according to claim 13, wherein a diffraction grating for forming a distributed feedback mirror is further formed under the optical active region of the quantum well layer.

19. The optical semiconductor device according to claim 13, wherein the quantum well layer has cleavage planes at both ends thereof.

20. The optical semiconductor device according to claim 13, wherein the barrier layers reduce film thickness thereof gradually from the first end to the second end of the wave guide region.

21. The optical semiconductor device according to claim 13, wherein the first cladding layer has a groove separating the first cladding layer into two parts, a first part corresponding to the optical active region and to second part corresponding to the wave guide region.

22. The optical semiconductor device according to claim 21, wherein said groove in the first cladding layer is filled with an insulating material.

23. The optical semiconductor device according to claim 13, further comprising a contact layer formed between the first electrode and the first cladding layer.

24. The optical semiconductor device according to claim 23, wherein the contact layer extends to a part of the wave guide region over the optical active region.

25. The optical semiconductor device according to claim 23, wherein the first electrode and the contact layer extends to a part of the wave guide region over the optical active region.

26. The optical semiconductor device according to claim 24, wherein the first electrode and the contact layer are separated into two parts above a vicinity of a boundary between the optical active region and the wave guide region.

27. The optical semiconductor device according to claim 16, wherein the well layer is made of InGaAs, the barrier layers are made of InGaAsP, the first and the second guide layers are made of InGaAsP, and the semiconductor substrate and the first cladding layer are made of InP.

28. The optical semiconductor device according to claim 13, wherein the well layer is made of InGaAsP of a first composition ratio and the barrier layers are made of InGaAsP of a second composition ratio which is different from the first composition ratio.

29. The optical semiconductor device according to claim 13, wherein the well layer is made of GaAs, and the barrier layers are made of AlGaAs.

30. The optical semiconductor device according to claim 13, wherein the well layer is made of GaInP and the barrier layers are made of AlGaInP.

31. The optical semiconductor device according to claim 13, further comprising:

buried layers formed on both sides of the quantum layer, the buried layers having an energy band gap which is larger than that of the well layer.

32. The optical semiconductor device according to claim 13, wherein an entire bottom surface of the quantum well layer is substantially parallel with an upper surface of the semiconductor substrate.

33. The optical semiconductor device according to claim 13, wherein the barrier layers reduce their film thickness gradually from the first end to the second end of the wave guide region.