Active pixel sensors with substantially planarized color filtering elements

  • US 5,990,506 A
  • Filed: 03/20/1997
  • Issued: 11/23/1999
  • Est. Priority Date: 03/20/1996
  • Status: Expired due to Term
First Claim
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1. An integrated semiconductor imaging device, comprising:

  • a sensor array having a plurality of pixel circuits disposed relative to one another on a semiconductor substrate, each of said pixel circuits including an optical sensor to receive light and an electronic element having at least one active transistor to convert said light into an electrical signal, wherein said pixel circuits are operable to generate an indicia indicative of an input scene;

    a first color filtering layer formed on said sensor array to cover a first portion of said sensor array and configured to transmit light in at least a first selected spectral bandwidth and absorb light that is substantially outside said first selected bandwidth, said optical sensor in each of said pixel circuits in said first portion being responsive in said first selected spectral bandwidth; and

    a first transparent layer, formed on said sensor array and displaced relative to said first color filtering layer to cover a remaining portion of said sensor array that is not covered by said first color filtering layer, said first transparent layer and said first color filtering layer being substantially of a same thickness and forming a first planarized layer which has a substantially flat upper surface on said first sensor array to cover said pixel circuits.

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