Dual purpose retaining ring and polishing pad conditioner

• US 6,004,193 A
• Filed: 07/17/1997
• Issued: 12/21/1999
• Est. Priority Date: 07/17/1997
• Status: Expired due to Term

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: LSI Logic Corporation (Broadcom, Inc.)
• Inventors: Lee, Dawn M., Nagahara, Ron J.
• Primary Examiner(s): Morgan, Eileen P.
• Application Number:
  US08/895,960
• Time in Patent Office: 887 Days
• Field of Search: 451/41, 451/56, 451/63, 451/443, 451/444, 451/285, 451/287, 451/288
• US Class Current: 451/285
• CPC Class Codes: B24B 37/30 for single side lapping of plane surfaces
• CPC Class Codes: B24B 53/017 Devices or means for dressing, cleaning or otherwise conditioning lapping tools

Abstract

An apparatus is provided for conditioning a polishing pad used for chemical-mechanical polishing. The apparatus comprises the retainer ring used to retain the semiconductor wafer against the polishing pad. Accordingly, the retainer ring serves a dual purpose: to retain the wafer in proper CMP position as well as condition the polishing surface while polishing of the wafer. The retainer ring includes an inner surface defining an opening to receive the semiconductor wafer. Dimensioned radially outside the inner surface is an outer surface. Placed on the distal ends between the inner and outer surfaces is an abrasive surface. The abrasive surface extends along a plane parallel to the retained frontside surface of the wafer. Both the wafer and the abrasive surface contact the polishing surface either in a rotation about a stationary axis or orbital movement about that axis. The wafer surface can be pressed to a greater or lesser extent against the polishing pad independent of the pressure exerted by the abrasive surface on that pad radially outside the wafer.

Claims

1. An apparatus for retaining a semiconductor wafer against a polishing pad, the apparatus comprising:

a retaining ring having an inner surface for retaining the wafer while polishing and having an outer surface and comprising an orthogonal surface arranged substantially perpendicular to the inner surface;

said inner surface defines an opening adapted for receiving the semiconductor wafer and a wafer carrier; and

said orthogonal surface comprises an abrasive material extending along the orthogonal surface said wafer carrier is configured to hold said semiconductor wafer, wherein said wafer carrier is movable within said opening.

2. The apparatus as recited in claim 1, wherein said orthogonal surface extends along a plane parallel to one surface of the semiconductor wafer.

3. The apparatus as recited in claim 1, wherein said orthogonal surface extends radially outside a perimeter of the semiconductor wafer.

4. The apparatus as recited in claim 1, wherein said retaining ring extends about a central axis between the inner surface and an outer surface displaced from the inner surface a radial distance relative to the central axis.

5. The apparatus as recited in claim 4, wherein said orthogonal surface extends between the outer and inner surfaces of said retaining ring.

6. The apparatus as recited in claim 1, wherein the said abrasive material comprises a patterned, silicon-based or carbon-based substance.

7. The apparatus as recited in claim 6, wherein said abrasive material comprises two sides substantially perpendicular to said inner side of said retaining ring, wherein one of said two sides is fixed to the orthogonal surface of the retaining ring and the other surface of said two sides comprises a plurality of protrusions interspersed with a plurality of recesses.

8. A chemical-mechanical polishing apparatus comprising:

a polishing pad having a moveable polishing surface;

a retaining ring having an outer and inner surface radially displaced from each other about a central axis, wherein the inner surface is adapted to retain a semiconductor wafer while polishing and defines an opening adapted to receive the semiconductor wafer; and

an abrasive surface extending orthogonally between the outer and inner surfaces of said retaining ring, wherein the abrasive surface is adapted to contact the moveable polishing surface of said polishing pad wherein said abrasive surface extends towards said polishing surface independent of a spacing between the semiconductor and the polishing surface.

9. The apparatus as recited in claim 8, wherein said abrasive surface extends within a plane parallel to the polishing surface and a surface of the semiconductor wafer.

10. The apparatus as recited in claim 8, wherein said abrasive surface extends within a plane parallel to and between the polishing surface and a surface of the semiconductor wafer.

11. The apparatus as recited in claim 8, wherein said abrasive surface rotates about said central axis within a plane parallel to the polishing surface.

12. The apparatus as recited in claim 8, wherein the abrasive surface orbits within a plane parallel to the polishing surface.

13. The apparatus as recited in claim 12, wherein the abrasive surface orbits within said plane a radial distance D₁ about a point.

14. The apparatus as recited in claim 13, wherein distance D₁ exceeds one-third of the radial extent of the semiconductor wafer.

15. The apparatus as recited in claim 8, further comprising another retaining ring adapted to receive another semiconductor wafer, wherein said another retaining ring includes an associated another abrasive surface adapted to contact the polishing surface.

16. The apparatus as recited in claim 15, wherein said abrasive surface and said another abrasive surface are displaced laterally from each other across the polishing surface.

17. The apparatus as recited in claim 8, wherein said abrasive surface extends radially outside a perimeter of the semiconductor wafer.

18. The apparatus as recited in claim 8, wherein said polishing surface rotates about an axis parallel to and spaced from the central axis.