Method for growing thin films

  • US 6,015,590 A
  • Filed: 09/25/1996
  • Issued: 01/18/2000
  • Est. Priority Date: 11/28/1994
  • Status: Expired due to Term
First Claim
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1. A method for growing a thin film onto a substrate, in which a substrate is placed in a reaction space and said substrate is subjected to alternately repeated surface reactions of a plurality of vapor phase reactants to form a thin film, said method comprising the steps of:

  • feeding said vapor phase reactants into said reaction space in the form of vapor phase pulses repeatedly and alternately, each reactant separately from its own source;

    causing said vapor phase reactants to react with the surface of the substrate to form a thin film compound on said substrate;

    evacuating said reaction space between two successive vapor phase pulses by connecting the reaction space to a pump so that substantially all of said reactants remaining in said reaction space and adsorbed on inner walls of said reaction space are removed to a level of less than 1% prior to the inflow of a second pulse of said two successive vapor phase pulses; and

    feeding an inactive gas into said reaction space simultaneously with said evacuating step.

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