Semiconductor component with a high-voltage endurance edge structure
DCFirst Claim
1. A semiconductor component having a high-voltage endurance edge structure, comprising:
- a semiconductor body having a first surface;
at least one inner zone having a first conductivity type disposed in said semiconductor body and bordering at least partially on said first surface of said semiconductor body;
at least one drain zone bordering on said at least one inner zone;
base zones having a second conductivity type embedded in said semiconductor body along said first surface;
source zones having the first conductivity type embedded in said base zones and forming a cell array, said cell array having a multiplicity of cells and an edge region;
a multiplicity of parallel-connected individual components disposed in said multiplicity of cells; and
at least a portion of said source zones disposed in said edge region of said cell array having shaded source zone regions for suppressing a switching-on of a parasitic diode formed of a respective one of said source zones and one of said base zones during a reverse flow of charge carriers, said cell array having cell rows with at least one outermost cell row of said cell rows disposed in said edge region and said source zones of said at least one outermost cell row having said shaded source zone regions.
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Abstract
A semiconductor component having a high-voltage endurance edge structure in which a multiplicity of parallel-connected individual components are disposed in a multiplicity of cells of a cell array. In an edge region, the semiconductor component has cells with shaded source zone regions. During commutation of the power semiconductor component, the shaded source zone regions suppress the switching on of a parasitic bipolar transistor caused by the disproportionately large reverse flow current density. Moreover, an edge structure having shaded source zone regions can be produced very easily in technological terms, in particular in the case of self-adjusting processes, and can thus be produced cost-effectively.
27 Citations
12 Claims
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1. A semiconductor component having a high-voltage endurance edge structure, comprising:
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a semiconductor body having a first surface; at least one inner zone having a first conductivity type disposed in said semiconductor body and bordering at least partially on said first surface of said semiconductor body; at least one drain zone bordering on said at least one inner zone; base zones having a second conductivity type embedded in said semiconductor body along said first surface; source zones having the first conductivity type embedded in said base zones and forming a cell array, said cell array having a multiplicity of cells and an edge region; a multiplicity of parallel-connected individual components disposed in said multiplicity of cells; and at least a portion of said source zones disposed in said edge region of said cell array having shaded source zone regions for suppressing a switching-on of a parasitic diode formed of a respective one of said source zones and one of said base zones during a reverse flow of charge carriers, said cell array having cell rows with at least one outermost cell row of said cell rows disposed in said edge region and said source zones of said at least one outermost cell row having said shaded source zone regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor component having a high-voltage endurance edge structure, comprising:
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a semiconductor body having a first surface; at least one inner zone having a first conductivity type disposed in said semiconductor body and bordering at least partially on said first surface of said semiconductor body; at least one drain zone bordering on said at least one inner zone; base zones having a second conductivity type embedded in said semiconductor body along said first surface;
source zones having the first conductivity type embedded in said base zones and forming a cell array, said cell array having a multiplicity of hexagonal cells and an edge region;a multiplicity of parallel-connected individual components disposed in said multiplicity of cells; and at least a portion of said source zones disposed in said edge region of said cell array having shaded source zone regions for suppressing a switching-on of a parasitic diode formed of a respective one of said source zones and one of said base zones during a reverse flow of charge carriers. - View Dependent Claims (12)
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Specification