Semiconductor component with a high-voltage endurance edge structure

  • US 6,037,631 A
  • Filed: 09/18/1998
  • Issued: 03/14/2000
  • Est. Priority Date: 09/18/1998
  • Status: Expired due to Term
First Claim
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1. A semiconductor component having a high-voltage endurance edge structure, comprising:

  • a semiconductor body having a first surface;

    at least one inner zone having a first conductivity type disposed in said semiconductor body and bordering at least partially on said first surface of said semiconductor body;

    at least one drain zone bordering on said at least one inner zone;

    base zones having a second conductivity type embedded in said semiconductor body along said first surface;

    source zones having the first conductivity type embedded in said base zones and forming a cell array, said cell array having a multiplicity of cells and an edge region;

    a multiplicity of parallel-connected individual components disposed in said multiplicity of cells; and

    at least a portion of said source zones disposed in said edge region of said cell array having shaded source zone regions for suppressing a switching-on of a parasitic diode formed of a respective one of said source zones and one of said base zones during a reverse flow of charge carriers, said cell array having cell rows with at least one outermost cell row of said cell rows disposed in said edge region and said source zones of said at least one outermost cell row having said shaded source zone regions.

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