Semiconductor light-emitting device

  • US 6,040,588 A
  • Filed: 09/08/1997
  • Issued: 03/21/2000
  • Est. Priority Date: 09/08/1996
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor light-emitting device comprising:

  • a first semiconductor layer being made of n-type GaN;

    a light-emitting layer of superlattice structure being formed on the first semiconductor layer by laminating a barrier layer being made of InY2 Ga1-Y1 N (Y1≧

    0) and a quantum well layer being made of InY2 Ga1-Y2 N (Y2>

    Y1 and Y2>

    0); and

    a second semiconductor layer being made of p-type AlX Ga1-X N (0.05<

    X<

    0.2);

    wherein layers being adjacent to the first semiconductor layer and the second semiconductor layer are the barrier layers in the light-emitting layer.

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