Device and method of forming a metal to metal capacitor within an integrated circuit

  • US 6,040,616 A
  • Filed: 08/12/1997
  • Issued: 03/21/2000
  • Est. Priority Date: 06/06/1995
  • Status: Expired due to Term
First Claim
Patent Images

1. For use in an integrated circuit structure having a prior level that includes a foundation dielectric, a capacitor comprising:

  • substantially planar first and second electrodes having a capacitor dielectric formed there between, said first electrode formed immediately over said prior level and a portion of said first electrode overlapping said second electrode to define a common area, said first electrode;

    extending beyond said common area, andconnecting said capacitor to said prior level outside said common area; and

    a contact metal located on the same level as and in close proximity to said capacitor and on a portion of said first electrode that extends beyond said common area, thereby to improve a circuit packing density of said integrated circuit structure.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×