Process for forming a semiconductor device

  • US 6,043,146 A
  • Filed: 07/27/1998
  • Issued: 03/28/2000
  • Est. Priority Date: 05/21/1997
  • Status: Expired due to Term
First Claim
Patent Images

1. A process for forming a semiconductor device comprising:

  • forming an insulating film over a substrate and a conductive region;

    forming a first buffer film over the insulating film;

    patterning the first buffer film and the insulating film to form an opening, wherein a portion of the opening exposes a portion of the conductive region;

    forming a first conductive layer over the first buffer film and within the opening, wherein the first conductive layer contacts the conductive region; and

    removing a portion of the first conductive layer overlying the insulating film and most of the first buffer film that overlies the insulating film.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×