Method of integrating Ldd implantation for CMOS device fabrication
First Claim
1. A semiconductor substrate having lightly doped drain regions formed by a method comprising the steps of:
- providing a semiconductor substrate having a p-well region and an n-well region;
forming a patterned gate oxide and gate electrode on each of the p-well region and the n-well region;
masking one of either the p-well region or the n-well region with a patterned photoresist having a prescribed thickness, leaving a non-masked region exposed;
implanting ions to form desired p-type lightly doped drain (Pldd) regions in the n-well region, including Pldd regions adjacent to edges of the gate electrode in the n-well region such that said implantation in the n-well is on the order of 0.1 μ
m or less; and
implanting ions to form desired n-type lightly doped drain (Nldd) regions in the p-well region, including Nldd regions adjacent to edges of the gate electrode in the p-well region, the Pldd and Nldd regions thus being formed with the use of only a single ion implantation masking step.
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Abstract
A method of integrating lightly doped drain implantation for complementary metal oxide semiconductor (CMOS) device fabrication includes providing a semiconductor substrate having a p-well region and an n-well region. A patterned gate oxide and gate electrode are formed on each of the p-well region and the n-well region. One of either the p-well region or the n-well region is masked with a patterned photoresist having a prescribed thickness, leaving a non-masked region exposed. Ions are then implanted to form desired p-type lightly doped drain (Pldd) regions in the n-well region, including Pldd regions adjacent to edges of the gate electrode in the n-well region. Lastly, ions are implanted to form desired n-type lightly doped drain (Nldd) regions in the p-well region, including Nldd regions adjacent to edges of the gate electrode in the p-well region, the Pldd and Nldd regions thus being formed with the use of only a single ion implantation masking step. A semiconductor substrate and an integrated circuit are also disclosed.
7 Citations
7 Claims
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1. A semiconductor substrate having lightly doped drain regions formed by a method comprising the steps of:
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providing a semiconductor substrate having a p-well region and an n-well region; forming a patterned gate oxide and gate electrode on each of the p-well region and the n-well region; masking one of either the p-well region or the n-well region with a patterned photoresist having a prescribed thickness, leaving a non-masked region exposed; implanting ions to form desired p-type lightly doped drain (Pldd) regions in the n-well region, including Pldd regions adjacent to edges of the gate electrode in the n-well region such that said implantation in the n-well is on the order of 0.1 μ
m or less; andimplanting ions to form desired n-type lightly doped drain (Nldd) regions in the p-well region, including Nldd regions adjacent to edges of the gate electrode in the p-well region, the Pldd and Nldd regions thus being formed with the use of only a single ion implantation masking step. - View Dependent Claims (2, 3)
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4. An integrated circuit having transistor devices fabricated on a semiconductor substrate having lightly doped drain regions, the semiconductor substrate formed by a method comprising the steps of:
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providing a semiconductor substrate having a p-well region and an n-well region; forming a patterned gate oxide and gate electrode on each of the p-well region and the n-well region; masking one of either the p-well region or the n-well region with a patterned photoresist having a prescribed thickness, leaving a non-masked region exposed; implanting ions to form desired n-type lightly doped drain (Nldd) regions in the p-well region, including Nldd regions adjacent to edges of the gate electrode in the p-well region, the Pldd and Nldd regions thus being formed with the use of only a single ion implantation masking step. - View Dependent Claims (5, 6, 7)
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Specification