Selectively sized spacers

  • US 6,046,089 A
  • Filed: 01/05/1998
  • Issued: 04/04/2000
  • Est. Priority Date: 01/05/1998
  • Status: Expired due to Term
First Claim
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1. A method for forming a device comprising:

  • forming at least one spacer adjacent to an edge of each of a plurality of gates on a substrate, the plurality of gates including a first gate and at least one remaining gate;

    applying a mask to the first gate, including at least a portion of said at least one spacer for the first gate;

    etching and therein sizing said at least one spacer for each of the at least one remaining gate into a geometry that is smaller than the at least one spacer for the first gate;

    removing the mask from the first gate; and

    applying an ion implantation and forming a highly doped region within the substrate adjacent to the sized at least one spacer.

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