Trench-gated MOSFET with integral temperature detection diode

• US 6,046,470 A
• Filed: 10/07/1997
• Issued: 04/04/2000
• Est. Priority Date: 10/02/1995
• Status: Expired due to Term

• Current Assignee: Siliconix Incorporated (Vishay Intertechnology Incorporated)
• Original Assignee: Siliconix Incorporated (Vishay Intertechnology Incorporated)
• Inventors: Williams, Richard K., Grabowski, Wayne
• Primary Examiner(s): Meier, Stephen D.
• Application Number:
  US08/946,613
• Time in Patent Office: 910 Days
• Field of Search: 257/328, 257/470
• US Class Current: 257/328
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48464 the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
• CPC Class Codes: H01L 27/0248 for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 29/7804 the other device being a pn-junction diode
• CPC Class Codes: H01L 29/7808 the other device being a breakdown diode, e.g. Zener diode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

A vertical N-channel trenched-gate power MOSFET includes an integral temperature detection diode. The diode includes an N+ region which serves as the cathode and which is formed within a tub of P-type material, which serves as the anode. The N+ region is separated from the trench. The anode of the temperature detection diode may be shorted to the source or may be separately biased. The temperature of the MOSFET is monitored by supplying a current through the diode in the forward direction and measuring the voltage across the forward-biased diode. In an alternative embodiment, a pair of N+ regions are formed within the P-tub, constituting a diode pair, and the temperature is detected by monitoring the difference in the voltages across the diodes. An overtemperature detection unit compares the voltage across the diode or diodes with a reference voltage and provides an output which can be used to turn the MOSFET off when the temperature reaches a predetermined level.

Claims

1. A trenched gate MOSFET comprising:

a semiconductor body comprising a drain region of a first conductivity type;

a trench formed in a surface of said semiconductor body;

a gate formed in said trench, said trench being lined with a dielectric layer for electrically insulating said gate from said semiconductor body;

a body region of a second conductivity type located adjacent said trench;

a source region of said first conductivity type located adjacent said trench and abutting said surface of said semiconductor body;

said MOSFET comprising a temperature detection cell, said temperature detection cell comprising a first diffusion of said first conductivity type and a second diffusion of said second conductivity type, said second diffusion enclosing and forming a PN junction with said first diffusion, said second diffusion extending to a level below a level of a bottom of said trench and having a dopant concentration such that said second diffusion functions to protect said dielectric layer at a comer of said trench from damage from high electric fields and to inhibit a turn-on of a bipolar transistor comprising said first and second diffusions, said PN junction forming a temperature detection diode.

2. The trenched gate MOSFET of claim 1 further comprising a first metal contact which contacts said source region and said second diffusion.

3. The trenched gate MOSFET of claim 2 further comprising a second metal contact which contacts said first diffusion.

4. The trenched gate MOSFET of claim 1 wherein said semiconductor body comprises a substrate and an epitaxial layer grown on a surface of said substrate.

5. The trenched gate MOSFET of claim 1 further comprising a deep diffusion of said second conductivity type contiguous to said body region, said deep diffusion extending downward to a level below a bottom of said trench.

6. The trenched gate MOSFET of claim 1 further comprising a buried region of said second conductivity type, said buried region being located beneath and spaced apart from said first diffusion, said buried region having a higher dopant concentration than said second diffusion.

7. The trenched gate MOSFET of claim 6 wherein said buried region is located at least 0.5 μ

m below a surface of said substrate.

8. The trenched gate MOSFET of claim 4 wherein said trench is formed entirely within said epitaxial layer.

9. The trenched gate MOSFET of claim 1 further comprising a first metal contact which contacts said source region and a second metal contact which contacts said second diffusion, said first and second metal contacts being electrically isolated from each other.

10. The trenched gate MOSFET of claim 9 further comprising a third metal contact which contacts said first diffusion.

15. A combination comprising the trenched gate MOSFET of claim 1 and an overtemperature detection unit, said overtemperature detection unit comprising:

a current source for supplying a current to said temperature detection diode;

an amplifier for amplifying a voltage across said temperature detection diode; and

a comparator for comparing an output of said amplifier with a reference voltage.

16. The combination of claim 15 further comprising a bias generator, first and second inputs of said bias generator being connected to said drain and source regions, respectively, of said MOSFET, a first output of said bias generator being connected to said current source.

17. The combination of claim 16 wherein said first output of said bias generator is connected to said amplifier.

18. The combination of claim 16 wherein said first output of said bias generator is connected to said comparator.

19. The combination of claim 16 further comprising a level shifter, a signal input of said level shifter being connected to an output of said comparator, a second output of said bias generator being connected to a power supply input of said level shifter.

20. The combination of claim 19 wherein said level shifter comprises a first NMOSFET and a first PMOSFET connected in a first conduction path and a second NMOSFET and a second PMOSFET connected in a second conduction path, said first and second conduction paths being connected in parallel, the gates of said first and second NMOSFETs being driven out of phase, a node between said second NMOSFET and said second PMOSFET being connected to a gate of a third PMOSFET, an output of said level shifter being connected to a terminal of said third PMOSFET.

21. The combination of claim 16 wherein said bias generator comprises:

a charge storage capacitor;

a second diode connected between said drain and said charge storage capacitor and a third diode connected between said gate and said charge storage capacitor; and

a charge pump supplied by a voltage across said capacitor.

22. The combination of claim 21 wherein said first output of said bias generator comprises an output of said charge pump.

23. The combination of claim 21 wherein said second output of said bias generator comprises a terminal of said capacitor.

24. The combination of claim 21 wherein said current source comprises a pair of current mirror transistors.

25. The combination of claim 21 wherein said charge pump comprises:

a first charge pump capacitor connected between said drain region and a first node;

a second charge pump capacitor connected between said gate and a second node;

a first charge pump diode connected between said first node and said second node;

a second charge pump diode connected between said second node and a first electrode of said charge storage capacitor; and

a third charge pump diode connected between a second electrode of said charge storage capacitor and said first node.

11. A trenched gate MOSFET comprising:

a semiconductor body comprising a drain region of a first conductivity type;

a trench formed in a surface of said semiconductor body;

a gate formed in said trench, said gate being electrically insulated from said semiconductor body by a dielectric layer;

a body region of a second conductivity type located adjacent said trench;

a source region of said first conductivity type located adjacent said trench and abutting said surface of said semiconductor body;

said MOSFET comprising a temperature detection cell, said temperature detection cell comprising first and second diffusions of said first conductivity type and a third diffusion of said second conductivity type, said first and second diffusions being spaced apart from each other and being enclosed in said third diffusion, a first diode being formed at a PN junction between said first and third diffusions and a second diode being formed at a PN junction between said second and third diffusions, said first and second diodes being for detecting a temperature within said MOSFET; and

a first metal contact in electrical contact with said first diffusion and a second metal contact in electrical contact with said second diffusion, said first and second metal contacts being electrically isolated from each other.

12. The trenched gate MOSFET of claim 11 further comprising a first metal contact which contacts said source region and said third diffusion.

13. The trenched gate MOSFET of claim 11 wherein said semiconductor body comprises a substrate and an epitaxial layer grown on a surface of said substrate.

14. The trenched gate MOSFET of claim 11 further comprising a deep diffusion of said second conductivity type contiguous to said body region, said deep diffusion extending downward to a level below a bottom of said trench.

26. The trenched-gate MOSFET of claim 11 further comprising:

a first current source connected to said first metal contact;

a second current source connect to said second metal contact; and

a comparator coupled to said first and second diodes.

27. The trenched-gate MOSFET of claim 26 wherein said comparator is responsive to a difference between (a) a difference between a first voltage across said first diode and a second voltage across said second diode, and (b) a reference voltage.

28. A method of detecting a temperature within a MOSFET formed in a semiconductor chip, said method comprising:

fabricating first and second temperature detection diodes integrally within said semiconductor chip;

causing respective currents to flow through said diodes;

detecting a first voltage across said first temperature detection diode and detecting a second voltage across said second temperature detection diode;

comparing said first and second voltages;

using the difference between said first and second voltages to determine said temperature.

29. The method of claim 28 wherein a current density in said first temperature detection diode is not equal to a current density in said second temperature detection diode.

30. The method of claim 29 wherein said diodes are the same size and said respective currents are of unequal magnitude.

31. The method of claim 29 wherein said respective currents are of equal magnitude and said diodes are of unequal size.