Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer

  • US 6,051,849 A
  • Filed: 02/27/1998
  • Issued: 04/18/2000
  • Est. Priority Date: 02/27/1998
  • Status: Expired due to Term
First Claim
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1. A gallium nitride semiconductor structure comprising:

  • an underlying gallium nitride layer having defect density of at least 108 cm-2 ;

    a patterned layer that includes an array of openings therein, on the underlying gallium nitride layer;

    a vertical gallium nitride layer having defect density of at least 108 cm-2 that extends from the underlying gallium nitride layer and through the array of openings; and

    a lateral gallium nitride layer having defect density of less than 104 cm-2 that extends from the vertical gallium nitride layer onto the patterned layer opposite the underlying gallium nitride layer.

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