Method of delaminating a pre-fabricated transistor layer from a substrate for placement on another wafer

• US 6,054,370 A
• Filed: 06/30/1998
• Issued: 04/25/2000
• Est. Priority Date: 06/30/1998
• Status: Expired due to Term

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Doyle, Brian S.
• Primary Examiner(s): Booth, Richard
• Assistant Examiner(s): Hack, Jonathan
• Application Number:
  US09/107,393
• Time in Patent Office: 665 Days
• Field of Search: 438/456-459
• US Class Current: 438/456
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: Y10S 438/915 Amphoteric doping

Abstract

A method of fabricating a film of active devices is provided. First damaged regions are formed, in a substrate, underneath first areas of the substrate where active devices are to be formed. Active devices are formed onto the first areas. Second damaged regions are formed, in the substrate, between the first damaged regions. The film is caused to detach from a rest of the substrate at a location where the first and second damaged regions are formed.

Claims

1. A method of fabricating a film of active devices, the method comprising:

a. forming first damaged regions in a substrate underneath first areas where active devices are to be formed;

b. forming said active devices onto said first areas;

c. forming second damaged regions, in said substrate, between said first damaged regions; and

d. causing said film to detach from a rest of said substrate at a location where said first and second damaged regions are formed.

2. The method of claim 1 wherein said first damaged regions are formed by way of ion implantation.

3. The method of claim 1 wherein forming first damaged regions includes masking second areas between said first areas.

4. The method of claim 3 wherein forming first damaged regions further includes implanting said substrate with a noble gas to create said first damaged regions.

5. The method of claim 3 wherein forming first damaged regions further including implanting said substrate with a substance including a noble gas.

6. The method of claim 5 wherein said substance further includes hydrogen.

7. The method of claim 6 wherein said substance further includes oxygen.

8. The method of claim 4 wherein said noble gas includes helium.

9. The method of claim 1 wherein forming second damaged regions includes masking said active devices and implanting said substrate with a gas.

10. The method of claim 9 wherein said gas includes hydrogen.

11. The method of claim 1 wherein causing said film to detach includes annealing said substrate at a temperature within a range of approximately 150°

Celsius to 400°

Celsius.

12. The method of claim 1 wherein causing said film to detach includes introducing mechanical constraints to a system including said substrate and said film.

13. A method of fabricating a film of active devices, the method comprising the steps of:

a forming active devices onto first areas of a substrate, said first areas separated by second areas;

implanting a number of ions into said substrate, said number of ions including first and second number of ions, said first number of ions implanted at angles with said first areas, said first number of ions causing first damaged regions underneath said first areas at a depth from said first area, said second number of ions implanted perpendicularly to said second areas, said second number of ions causing second damaged regions at substantially the same depth underneath the second areas; and

causing said film to detach from a rest of said substrate at a location substantially corresponding to said first and second damaged regions.

14. The method of claim 13 wherein said ions include hydrogen.

15. The method of claim 13 where said ions include helium.

16. The method of claim 13 wherein said devices are masked.