High voltage boosted word line supply charge pump and regulator for DRAM

  • US 6,055,201 A
  • Filed: 10/26/1998
  • Issued: 04/25/2000
  • Est. Priority Date: 04/06/1990
  • Status: Expired due to Fees
First Claim
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1. A dynamic random access memory (DRAM) boosted voltage word line supply comprising:

  • DC voltage supply providing plural voltage levels;

    a boosting capacitor having first and second terminals;

    switching means including a first switch between one level of the voltage supply and the first terminal of the boosting capacitor and a second switch between the first terminal of the boosting capacitor and a capacitive load, the first and second switches being driven by clock signals, the switching means alternately connecting the first terminal of the boosting capacitor to the voltage supply and to the capacitive load while alternating the level of the voltage supply connected to the second terminal of the boosting capacitor to pump the voltage on the capacitive load to a boosted voltage level greater than and of the same polarity as the DC voltage supply to provide a boosted voltage supply;

    a memory cell access transistor connecting a memory cell capacitor to a bit line and having a gate connected to a word line; and

    a word line decoder which selectively couples the boosted voltage supply to a selected word line.

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