Magnetron tuning using plasmas

• US 6,064,154 A
• Filed: 06/10/1998
• Issued: 05/16/2000
• Est. Priority Date: 06/10/1998
• Status: Expired due to Term

• Current Assignee: Raytheon Company (Rtx Corporation)
• Original Assignee: Raytheon Company (Rtx Corporation)
• Inventors: Santoru, Joseph, Crouch, David D., Harvey, Robin J.
• Primary Examiner(s): Bettendorf, Justin P.
• Application Number:
  US09/095,166
• Time in Patent Office: 706 Days
• Field of Search: 315/39.55, 315/39.57, 331/90
• US Class Current: 315/39.57
• CPC Class Codes: H01J 23/213 Simultaneous tuning of more than one resonator, e.g. resonant cavities of a magnetron
• CPC Class Codes: H01J 25/587 Multi-cavity magnetrons

Abstract

Improved magnetron oscillators that controllably form a plasma within each of its resonant cavities to rapidly change the resonant frequency of each cavity. The present invention also provides for frequency tuning methods for use with magnetron oscillators. The plasma is controllably formed in one or more subcells of each resonant cavity in a manner that alters the electromagnetic field within each cavity. Preferably, a magnetized collisional plasma is controlled to rapidly change the resonant frequency of each cavity. However, many types of plasmas may be used to implement the present invention. Controlling formation of the plasma within each cavity tunes the magnetron oscillator on a submillisecond time scale.

Claims

1. A magnetron oscillator comprising:

a magnetron tube comprising an anode having a plurality of inwardly protruding vanes and a central cathode, and wherein a plurality of resonant cavities are formed that are bounded by gaps between ends of adjacent vanes, walls of the inwardly protruding vanes and an adjacent portion of the wall of the anode;

means for supplying a bias voltage between the anode and central cathode to create a DC electric field therebetween;

means for applying a magnetic field along an axial direction of the magnetron tube; and

one or more gas-filled subcells disposed within each of the plurality of resonant cavities; and

a plasma formed within one or more selected subcells of each cavity which is controllable to alter the electromagnetic field within each cavity to tune the oscillating frequency of the magnetron oscillator.

2. The magnetron oscillator of claim 1 wherein the plasma comprises a low-density plasma wherein dielectric properties of the plasma change the effective volume of the resonant cavities in which the plasma is formed.

3. The magnetron oscillator of claim 1 wherein the plasma comprises a high-density plasma in which the plasma frequency is sufficiently high so that microwaves are reflected by the plasma.

4. The magnetron oscillator of claim 1 wherein the plasma comprises a magnetized collisional plasma.

5. The magnetron oscillator of claim 4 wherein the plasma comprises a high-density plasma in which the plasma frequency is sufficiently high so that microwaves are reflected by the plasma.

6. The magnetron oscillator of claim 4 wherein the plasma comprises a low-density plasma wherein dielectric properties of the plasma change the effective volume of the resonant cavities in which the plasma is formed.

7. In a magnetron oscillator comprising a magnetron tube having an anode with a plurality of inwardly protruding vanes and a cathode and wherein a plurality of resonant cavities are formed that are bounded by gaps between ends of adjacent vanes, walls of the inwardly protruding vanes and an adjacent portion of the wall of the anode, means for supplying a bias voltage between the anode and cathode to create a DC electric field therebetween, and means for applying a magnetic field along an axial direction of the magnetron tube, a method of frequency tuning the magnetron oscillator comprising the steps of:

disposing one or more gas-filled subcells within each of the plurality of resonant cavities; and

forming a plasma within selected subcells of each resonant cavity to alter the electromagnetic field within each cavity to tune the oscillating frequency of the magnetron oscillator.

8. The method of claim 7 which comprises the step of forming a low-density plasma within one or more selected subcells of each resonant cavity wherein dielectric properties of the plasma change the effective volume of the resonant cavities in which the plasma is formed.

9. The method of claim 7 which comprises the step of forming a high-density plasma within one or more selected subcells of each cavity wherein the plasma frequency sufficiently high so that microwaves are reflected by the plasma.

10. The method of claim 7 which comprises the step of forming a magnetizeed collisional plasma within one or more selected subcells of each resonant cavity.

11. The method of claim 10 which comprises the step of forming a high-density plasma within one or more selected subcells of each resonant cavity in which the plasma frequency sufficiently high so that microwaves are reflected by the plasma.

12. The method of claim 10 which comprises the step of forming a low-density plasma within one or more selected subcells of each resonant cavity wherein dielectric properties of the plasma change the effective volume of the resonant cavities in which the plasma is formed.