System for enabling a full-bridge switch-mode amplifier to recover all reactive energy

• US 6,072,362 A
• Filed: 07/10/1998
• Issued: 06/06/2000
• Est. Priority Date: 07/10/1998
• Status: Expired due to Term

• Current Assignee: Ambrell Corporation (inTEST Corporation)
• Original Assignee: Ameritherm, Inc. (inTEST Corporation)
• Inventors: Lincoln, Daniel J.
• Primary Examiner(s): Lee, Benny
• Assistant Examiner(s): Choe, Henry
• Application Number:
  US09/113,552
• Time in Patent Office: 697 Days
• Field of Search: 330/207 A, 330/146, 330/251, 330/297, 330/10
• US Class Current: 330/10
• CPC Class Codes: H02M 7/5387 in a bridge configuration
• CPC Class Codes: H03F 3/2173 of the bridge type

Abstract

A full-bridge amplifier that is able to provide power to all types of loads. The fill-bridge amplifier according to the present invention recovers reactive energy produced by capacitive loads instead of having the reactive energy be dissipated in the switches of the amplifier, thereby causing device failure. In one embodiment, two inductors and four diodes are added to the conventional full-bridge topology. Furthermore, a full-bridge amplifier according to an embodiment of the present invention is able to operate over a broad-band of radio frequencies.

Claims

1. An RF power supply, comprising:

an amplifier comprising means for producing an alternating voltage and for recovering reactive energy produced by a capacitive load;

a direct current (dc) power source to provide dc power to said amplifier; and

a frequency generator to control the frequency of said alternating voltage produced by said amplifier.

2. The RF power supply of claim 1, wherein said amplifier further comprises means for delivering up to 3.5 kilowatts of power over a frequency range of about 50 kHz to about 1.0 MHz.

3. The RF power supply of claim 1, wherein said means for producing an alternating voltage and for recovering reactive energy produced by a capacitive load comprises:

a first, second, third, and fourth switch;

a first, second, third, fourth, fifth, and sixth diode, each diode having a cathode and an anode; and

a first, second, third, and fourth inductor, wherein

said first switch is coupled between said dc power source and said cathode of said first diode,

said second switch is coupled between said anode of said first diode and a common reference node,

said third switch is coupled between said dc power source and said cathode of said second diode,

said fourth switch is coupled between said anode of said second diode and said common reference node,

said cathode of said third diode is coupled to said dc power source, and said anode of said third diode is coupled to a first node,

said cathode of said fourth diode is coupled to said first node, and said anode of said fourth diode is coupled to said common reference node,

said cathode of said fifth diode is coupled to said dc power source, and said anode of said fifth diode is coupled to a second node,

said cathode of said sixth diode is coupled to said second node, and said anode of said sixth diode is coupled to said common reference node,

said first inductor is coupled between said first node and said cathode of said first diode,

said second inductor is coupled between said first node and said anode of said first diode,

said third inductor is coupled between said second node and said cathode of said second diode, and

said fourth inductor is coupled between said second node and said anode of said second diode.

4. The RF power supply of claim 3, further comprising a first output terminal coupled to said first node and second output terminal coupled to said second node, wherein a tank circuit is coupled to said first and second output terminals.

5. The RF power supply of claim 4, wherein said tank circuit is a parallel resonant tank circuit.

6. The RF power supply of claim 3, wherein each of said first, second, third, and fourth switch is a transistor.

7. The RF power supply of claim 6, wherein said transistor is an enhancement mode metal oxide field effect transistor.

8. The RF power supply of claim 6, wherein said transistor is a depletion mode metal oxide field effect transistor.

9. The RF power supply of claim 3, wherein each of said first, second, third, and fourth switch comprises two metal oxide field effect transistors connected in parallel.

10. The RF power supply of claim 3, further comprising a first, second, third, and fourth capacitor, wherein said first capacitor is coupled across said third diode, said second capacitor is coupled across said fourth diode, said third capacitor is coupled across said fifth diode, and said fourth capacitor is coupled across said sixth diode.

11. The RF power supply of claim 1, wherein said means for producing an alternating voltage and for recovering reactive energy produced by a capacitive load comprises:

a first, second, third, and fourth switch;

a first, second, third, and fourth diode, each diode having a cathode and an anode; and

a first and second inductor, wherein

said first switch is coupled between said dc power source and a first common node,

said second switch is coupled between said first common node and a common reference node,

said third switch is coupled between said dc power source and a second common node,

said fourth switch is coupled between said second common node and said common reference node,

said cathode of said first diode is coupled to said dc power source, and said anode of said first diode is coupled to a third common node,

said cathode of said second diode is coupled to said third common node, and said anode of said second diode is coupled to said common reference node,

said cathode of said third diode is coupled to said dc power source, and said anode of said third diode is coupled to said fourth common node,

said cathode of said fourth diode is coupled to said fourth common node, and said anode of said fourth diode is coupled to said common reference node,

said first inductor is coupled between said first common node and said third common node, and

said second inductor is coupled between said second common node and said fourth common node.

12. The RF power supply of claim 11, further comprising a first output terminal coupled to said third node and second output terminal coupled to said fourth node, wherein a tank circuit is coupled to said first and second output terminals.

13. The RF power supply of claim 12, wherein said tank circuit is a parallel resonant tank circuit.

14. The RF power supply of claim 11, wherein each of said first, second, third, and fourth switch is a transistor.

15. The RF power supply of claim 14, wherein said transistor is an enhancement mode metal oxide field effect transistor.

16. The RF power supply of claim 15, wherein said transistor is a depletion mode metal oxide field effect transistor.

17. The RF power supply of claim 11, wherein each of said first, second, third, and fourth switch comprises two metal oxide field effect transistors connected in parallel.

18. The RF power supply of claim 11, further comprising a first, second, third, and fourth capacitor, wherein said first capacitor is coupled across said first diode, said second capacitor is coupled across said second diode, said third capacitor is coupled across said third diode, and said fourth capacitor is coupled across said fourth diode.

33. The RF power supply of claim 1, wherein said load comprises a tank circuit having at least one capacitor and at least one inductor connected in series.

34. The RF power supply of claim 1, wherein said load comprises a tank circuit having at least one capacitor and at least one inductor connected in parallel.

35. The RF power supply of claim 1, wherein said means for recovering reactive energy produced by a capacitive load recovers substantially all capacitive reactive energy produced by a capacitive load.

36. The RF power supply of claim 1, wherein said means for recovering reactive energy produced by a capacitive load recovers substantially all reactive energy produced by a capacitive load.

19. A full-bridge amplifier comprising:

a first, second, third, and fourth switch;

a first, second, third, and fourth diode, each diode having a cathode and an anode; and

a first and second inductor, wherein

said first switch is coupled between a power supply terminal and a first common node,

said second switch is coupled between said first common node and a common reference node,

said third switch is coupled between said power supply terminal and a second common node,

said fourth switch is coupled between said second common node and said common reference node,

said cathode of said first diode is coupled to said power supply terminal, and said anode of said first diode is coupled to a third common node,

said cathode of said second diode is coupled to said third common node, and said anode of said second diode is coupled to said common reference node,

said cathode of said third diode is coupled to said power supply terminal, and said anode of said third diode is coupled to said fourth common node,

said cathode of said fourth diode is coupled to said fourth common node, and said anode of said fourth diode is coupled to said common reference node,

said first inductor is coupled between said first common node and said third common node, and

said second inductor is coupled between said second common node and said fourth common node.

20. The full-bridge amplifier of claim 19, further comprising a load being coupled between said third node and said fourth node.

21. The full-bridge amplifier of claim 19, wherein each of said first, second, third, and fourth switch is a transistor.

22. The full-bridge amplifier of claim 21, wherein said transistor is an enhancement mode metal oxide field effect transistor.

23. The full-bridge amplifier of claim 21, wherein said transistor is a depletion mode metal oxide field effect transistor.

24. The full-bridge amplifier of claim 19, wherein each of said first, second, third, and fourth switch comprises two metal oxide field effect transistors connected in parallel.

25. The full-bridge amplifier of claim 19, further comprising a first, second, third, and fourth capacitor, wherein said first capacitor is coupled across said first diode, said second capacitor is coupled across said second diode, said third capacitor is coupled across said third diode, and said fourth capacitor is coupled across said fourth diode.

26. A fill-bridge amplifier, comprising:

a first, second, third, and fourth switch;

a first, second, third, fourth, fifth, and sixth diode, each diode having a cathode and an anode; and

a first, second, third, and fourth inductor, wherein

said first switch is coupled between a power supply terminal and said cathode of said first diode,

said second switch is coupled between said anode of said first diode and a common reference node,

said third switch is coupled between said power supply terminal and said cathode of said second diode,

said fourth switch is coupled between said anode of said second diode and said common reference node,

said cathode of said third diode is coupled to said power supply terminal, and said anode of said third diode is coupled to a first node,

said cathode of said fourth diode is coupled to said first node, and said anode of said fourth diode is coupled to said common reference node,

said cathode of said fifth diode is coupled to said power supply terminal, and said anode of said fifth diode is coupled to a second node,

said cathode of said sixth diode is coupled to said second node, and said anode of said sixth diode is coupled to said common reference node,

said first inductor is coupled between said first node and said cathode of said first diode,

said second inductor is coupled between said first node and said anode of said first diode,

said third inductor is coupled between said second node and said cathode of said second diode, and

said fourth inductor is coupled between said second node and said anode of said second diode.

27. The full-bridge amplifier of claim 26, further comprising a load being coupled between said first node and said second node.

28. The full-bridge amplifier of claim 26, wherein each of said first, second, third, and fourth switch is a transistor.

29. The full-bridge amplifier of claim 28, wherein said transistor is an enhancement mode metal oxide field effect transistor.

30. The full-bridge amplifier of claim 28, wherein said transistor is a depletion mode metal oxide field effect transistor.

31. The full-bridge amplifier of claim 26, wherein each of said first, second, third, and fourth switch comprises two metal oxide field effect transistors connected in parallel.

32. The full-bridge amplifier of claim 26, further comprising a first, second, third, and fourth capacitor, wherein said first capacitor is coupled across said third diode, said second capacitor is coupled across said fourth diode, said third capacitor is coupled across said fifth diode, and said fourth capacitor is coupled across said sixth diode.

37. An RF power supply, comprising:

an amplifier comprising means for producing an alternating voltage and for recovering reactive energy produced by a capacitive load;

a direct current (dc) power source to provide dc power to said amplifier; and

a frequency generator to control the frequency of said alternating voltage produced by said amplifier, wherein

said means for producing an alternating voltage and for recovering substantially all reactive energy produced by a capacitive load comprises;

a first, second, third, and fourth switch;

a first, second, third, fourth, fifth, and sixth diode, each diode having a cathode and an anode; and

a first, second, third, and fourth inductor, wherein

said first switch is coupled between said dc power source and said cathode of said first diode,

said second switch is coupled between said anode of said first diode and a common reference node,

said third switch is coupled between said dc power source and said cathode of said second diode,

said fourth switch is coupled between said anode of said second diode and said common reference node,

said cathode of said third diode is coupled to said dc power source, and said anode of said third diode is coupled to a first node,

said cathode of said fourth diode is coupled to said first node, and said anode of said fourth diode is coupled to said common reference node,

said cathode of said fifth diode is coupled to said dc power source, and said anode of said fifth diode is coupled to a second node,

said cathode of said sixth diode is coupled to said second node, and said anode of said sixth diode is coupled to said common reference node,

said first inductor is coupled between said first node and said cathode of said first diode,

said second inductor is coupled between said first node and said anode of said first diode, said third inductor is coupled between said second node and said cathode of said second diode, and

said fourth inductor is coupled between said second node and said anode of said second diode.

38. The RF power supply of claim 37, further comprising a first output terminal coupled to said first node and second output terminal coupled to said second node, wherein a tank circuit is coupled to said first and second output terminals.

39. The RF power supply of claim 38, wherein said tank circuit is a parallel resonant tank circuit.

40. The RF power supply of claim 37, wherein each of said first, second, third, and fourth switch is a transistor.

41. The RF power supply of claim 40, wherein said transistor is an enhancement mode metal oxide field effect transistor.

42. The RF power supply of claim 40, wherein said transistor is a depletion mode metal oxide field effect transistor.

43. The RF power supply of claim 37, wherein each of said first, second, third, and fourth switch comprises two metal oxide field effect transistors connected in parallel.

44. The RF power supply of claim 37, further comprising a first, second, third, and fourth capacitor, wherein said first capacitor is coupled across said third diode, said second capacitor is coupled across said fourth diode, said third capacitor is coupled across said fifth diode, and said fourth capacitor is coupled across said sixth diode.

45. An RF power supply, comprising:

an amplifier comprising means for producing an alternating voltage and for recovering reactive energy produced by a capacitive load;

a direct current (dc) power source to provide dc power to said amplifier; and

a frequency generator to control the frequency of said alternating voltage produced by said amplifier, wherein

said means for producing an alternating voltage and for recovering reactive energy produced by a capacitive load comprises;

a first, second, third, and fourth switch;

a first, second, third, and fourth diode, each diode having a cathode and an anode; and

a first and second inductor, wherein

said first switch is coupled between said dc power source and a first common node,

said second switch is coupled between said first common node and a common reference node,

said third switch is coupled between said dc power source and a second common node,

said fourth switch is coupled between said second common node and said common reference node,

said cathode of said first diode is coupled to said dc power source, and said anode of said first diode is coupled to a third common node,

said cathode of said second diode is coupled to said third common node, and said anode of said second diode is coupled to said common reference node,

said cathode of said third diode is coupled to said dc power source, and said anode of said third diode is coupled to said fourth common node,

said cathode of said fourth diode is coupled to said fourth common node, and said anode of said fourth diode is coupled to said common reference node,

said first inductor is coupled between said first common node and said third common node, and

said second inductor is coupled between said second common node and said fourth common node.

46. The RF power supply of claim 45, further comprising a first output terminal coupled to said third node and second output terminal coupled to said fourth node, wherein a tank circuit is coupled to said first and second output terminals.

47. The RF power supply of claim 46, wherein said tank circuit is a parallel resonant tank circuit.

48. The RF power supply of claim 45, wherein each of said first, second, third, and fourth switch is a transistor.

49. The RF power supply of claim 48, wherein said transistor is an enhancement mode metal oxide field effect transistor.

50. The RF power supply of claim 49, wherein said transistor is a depletion mode metal oxide field effect transistor.

51. The RF power supply of claim 45, wherein each of said first, second, third, and fourth switch comprises two metal oxide field effect transistors connected in parallel.

52. The RF power supply of claim 45, further comprising a first, second, third, and fourth capacitor, wherein said first capacitor is coupled across said first diode, said second capacitor is coupled across said second diode, said third capacitor is coupled across said third diode, and said fourth capacitor is coupled across said fourth diode.