Frequency synthesizer using micro electro mechanical systems (MEMS) technology and method

• US 6,094,102 A
• Filed: 04/30/1999
• Issued: 07/25/2000
• Est. Priority Date: 04/30/1999
• Status: Active Grant

• Current Assignee: Teledyne Scientific & Imaging, LLC (Teledyne Technologies Incorporated)
• Original Assignee: Rockwell Science Center LLC
• Inventors: Mehrotra, Deepak, Pehlke, David R., Yao, Jun J., Bartlett, James L., Tham, J. L. Julian, Marcy, 5th, Henry O., Seabury, Charles W., Pedrotti, Kenneth D., Chang, Mau Chung F.
• Primary Examiner(s): MIS, DAVID C
• Application Number:
  US09/302,535
• Time in Patent Office: 452 Days
• Field of Search: 331/17, 331/18, 331/23, 331/25, 331/DIG. 2, 329/325, 327/156-159, 360/30, 360/51, 455/260, 455/208
• US Class Current: 331/17
• CPC Class Codes: H03L 7/0891 the up-down pulses controlling source and sink current generators, e.g. a charge pump
• CPC Class Codes: H03L 7/093 using special filtering or amplification characteristics in the loop H03L7/087 - H03L7/091 take precedence
• CPC Class Codes: H03L 7/107 using a variable transfer function for the loop, e.g. low pass filter having a variable bandwidth
• CPC Class Codes: H03L 7/18 using a frequency divider or counter in the loop H03L7/20, H03L7/22 take precedence

Abstract

A frequency stabilizer circuit in the form of a charge-pump phase-lock loop utilizing a MEMS capacitance device, preferably a tunable MEMS capacitor or a MEMS capacitor bank, which more rapid and with a greater precision determine the phase and frequency of a carrier signal so that it can be extracted, providing an information signal of interest. Such MEMS devices have the added advantage of providing linear capacitance, low insertion losses, higher isolation and high reliability, they run on low power and permit the entire circuit to be fabricated on a common substrate. The use of the MEMS capacitance device reduces unwanted harmonics generated by the circuit'"'"'s charge pump allowing the filtering requirements to be relaxed or perhaps eliminated.

Claims

1. An electric circuit for obtaining an information signal comprising:

a voltage control oscillator that produces a local signal;

a phase detector that compares a remote signal, comprising a carrier signal and an information signal, to said local signal;

a transresistance amplifier that converts the difference between said local and remote signals from a voltage into a current; and

an a Micro Electro-Mechanical System (MEMS) capacitance device whose capacitance is adjustably tunable to integrate said current and provide a voltage to said voltage control oscillator to adjust said local signal.

2. The electric circuit of claim 1, wherein said circuit adjusts the capacitance of said MEMS capacitance device.

3. The electric circuit of claim 2, wherein said MEMS capacitance device is a MEMS tunable capacitor.

4. The electric circuit of claim 3, wherein said MEMS capacitance device has a tuning ratio of greater then 10 to 1.

5. The electric circuit of claim 3, wherein said MEMS tunable capacitor is adjustable by the use of electrostatic force.

6. The electric circuit of claim 3, wherein said MEMS capacitor comprises:

a flexure structure that is anchored to and suspended above a substrate so that it flexes along a direction of motion;

a control capacitor on said substrate, said control capacitor having a pair of opposing plates, at least one of said plates being connected to said flexure structure so that it is movable in response to an electrostatic force produced by a control voltage across said control capacitor, said force being proportional to the plates'"'"' overlapping surface area A_C ;

a signal capacitor on said substrate that receives a signal voltage, said control capacitor having a pair of opposing plates, at least one of said plates being suspended so that it is movable; and

a coupler that slaves the motion of said signal capacitor'"'"'s movable plate to the motion of said control capacitor'"'"'s movable plate to set the capacitance of said signal capacitor and electrically isolates the signal capacitor from the control capacitor,

said flexure structure exhibiting a small spring constant in the direction of motion to allow a wide range of motion for tuning the signal capacitor, and

said signal capacitor'"'"'s surface area A_S being smaller then the control capacitor'"'"'s surface area A_C and the spring constant of said isolator in the direction of an electrostatic force produced by said signal voltage being large to reduce the sensitivity of said signal capacitor'"'"'s moveable plate to the signal voltage.

7. The tunable MEMS capacitor of claim 6, wherein said signal capacitor is an interdigitated capacitor whose plates have asymmetrically spaced interdigitated fingers where electrostatic force between fingers dominates the fringing force between the end of the fingers and opposing plate so that the direction of motion is orthogonal to the direction of the electrostatic force.

8. The tunable MEMS capacitor of claim 6, wherein said signal capacitor is a parallel-plate capacitor in which the control capacitor moves the signal capacitor'"'"'s moveable plate so as to change the signal capacitor'"'"'s surface area A_S to set its capacitance while maintaining a substantially constant spacing between the signal capacitor'"'"'s plates.

9. The electric circuit of claim 1, wherein said circuit is monolithically integrated on a common substrate.

10. The electric circuit of claim 9, wherein said common substrate is semi-insulating gallium arsenide (GaAs).

11. The electric circuit of claim 9, wherein said common substrate is silicon.

12. The electric circuit of claim 1, wherein said circuit further comprises:

a low pass filter to remove high frequency harmonics generated by the transresistance amplifier; and

a divider to reduce the local frequency generated by the voltage control oscillator.

13. The electric circuit of claim 1, wherein said MEMS capacitance device comprises a plurality of series-connected MEMS switch-capacitor pairs to vary the total capacitance.

14. The electric circuit of claim 13, wherein said MEMS switch-capacitor pairs are mechanically switched by the use of electrostatic force to vary the total capacitance.

15. The electric circuit of claim 13, wherein said circuit is monolithically integrated on a common substrate.

16. The electric circuit of claim 15, wherein said common substrate is semi-insulating gallium arsenide (GaAs).

17. The electric circuit of claim 15, wherein said common substrate is silicon.

18. A method for obtaining an information signal, comprising:

setting an initial capacitance of a Micro Electro-Mechanical System (MEMS) capacitance device;

generating a local signal;

receiving a remote signal comprising a carrier signal and an information signal;

comparing the local signal to the carrier signal to determining the difference;

integrating the difference in the signals by the use of the MEMS capacitance device;

using the integrated signal to adjust the local signal;

adjusting the capacitance of the MEMS capacitance device;

repeating the above steps until the local signal is in sync with the carrier signal; and

extracting the information signal.

19. The method of claim 18, further comprising the steps of:

generating a feedback signal based on the difference between the local signal and the carrier signal;

using said feedback signal to mechanically adjust the capacitance of said MEMS capacitance device.

20. The method of claim 19, further comprising the steps of:

filtering the integrated signal to remove unwanted high frequency harmonics; and

dividing the local signal to reduce its frequency.

21. The method of claim 19, wherein said capacitance device is an adjustable (MEMS) capacitor.

22. The method of claim 21, wherein said MEMS capacitor has a adjusting ratio of greater then 10 to 1.

23. The method of claim 21, wherein said MEMS capacitor is adjustable by the use of electrostatic force.

24. The method of claim 19, wherein said method is conducted by a single circuit that is monolithically integrated on a common substrate.

25. The method of claim 24, wherein said common substrate is semi-insulating gallium arsenide (GaAs).

26. The method of claim 24, wherein said common substrate is silicon.

27. The method of claim 19, wherein said capacitance device is a plurality of series-connected MEMS switch-capacitor pairs.

28. The method of claim 27, wherein said MEMS switch-capacitor pairs are mechanically switched by the use of electrostatic force to vary the capacitance.

29. The method of claim 27, wherein said method is conducted by a single circuit that is monolithically integrated on a common substrate.

30. The method of claim 27, wherein said common substrate is semi-insulating gallium arsenide (GaAs).

31. The method of claim 27, wherein said common substrate is silicon.

32. A frequency synthesizer comprising:

a receiver for receiving a signal which comprises a carrier and an information signal;

a feedback circuit, containing said receiver and a Micro Electro-Mechanical System (MEMS) capacitance device, wherein said circuit generates a feedback adjustable local signal to synch with and remove said carrier signal to provide said information signal.

33. The frequency synthesizer of claim 32, wherein said circuit adjusts the capacitance of said MEMS capacitance device.

34. The electric circuit of claim 32, wherein said MEMS capacitance device is a MEMS tunable capacitor.

35. The electric circuit of claim 34, wherein said MEMS capacitor has a tuning ratio of greater then 10 to 1.

36. The electric circuit of claim 32, wherein said circuit is monolithically integrated on a common substrate.

37. The electric circuit of claim 32, wherein said circuit further comprises:

a low pass filter to remove high frequency harmonics; and

a divider to reduce the local frequency generated by the voltage control oscillator.

38. The electric circuit of claim 32, wherein said MEMS capacitance device comprises a plurality of series-connected MEMS switch-capacitor pairs to vary the total capacitance.