Trenched gate metal oxide semiconductor device and method

CAFC
  • US 6,097,061 A
  • Filed: 03/30/1998
  • Issued: 08/01/2000
  • Est. Priority Date: 03/30/1998
  • Status: Expired due to Term
First Claim
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1. A semiconductor transistor comprising:

  • a semiconductor substrate of a first conductivity type;

    a source region of a second conductivity type in the semiconductor substrate;

    a drain region of the second conductivity type spaced from the source region in the semiconductor substrate;

    a trench having substantially upright vertical surfaces and a bottom surface formed in the semiconductor substrate intermediate the source and drain regions;

    a channel region formed in the semiconductor substrate, the channel region forming a contiguous region beneath the bottom surface of the trench and immediately contiguous to the source and drain regions;

    a trench-to-gate insulating layer formed on the substantially upright vertical surfaces and the bottom surface inside the trench, the trench-to-gate insulating layer forming a contiguous layer inside the trench; and

    a trenched gate electrode having a top surface and formed on the trench-to-gate insulating layer inside the trench.

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