Process for producing semiconductor substrate

• US 6,103,598 A
• Filed: 07/11/1996
• Issued: 08/15/2000
• Est. Priority Date: 07/13/1995
• Status: Expired due to Term

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Sakaguchi, Kiyofumi, Sato, Nobuhiko, Yonehara, Takao, Yamagata, Kenji
• Primary Examiner(s): McCamish, Marion
• Assistant Examiner(s): JUSKA, CHERYL ANN
• Application Number:
  US08/678,694
• Time in Patent Office: 1,496 Days
• Field of Search: 438/753, 438/756, 438/751, 438/750, 438/749, 438/745, 438/459
• US Class Current: 438/459
• CPC Class Codes: H01L 21/0203 Making porous regions on the surface
• CPC Class Codes: H01L 21/76243 using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
• CPC Class Codes: H01L 21/76256 using silicon etch back techniques, e.g. BESOI, ELTRAN

Abstract

A process for producing a semiconductor substrate is provided which comprises providing a first substrate made of silicon having a porous silicon layer formed thereon by making porous the substrate silicon and a nonporous monocrystalline silicon layer epitaxially grown on the porous silicon layer, laminating the first substrate onto a second substrate in a state that at least one of lamination faces of the first and the second substrates has a silicon oxide layer and the nonporous monocrystalline silicon layer is interposed between the laminated substrates, and removing the porous silicon layer by etching, wherein the porous silicon layer is removed by etching with an etchant which etches the nonporous monocrystalline silicon layer and the silicon oxide layer at respective etching rates of not more than 10 angstroms per minute.

Claims

1. A process for producing a semiconductor substrate comprising providing a first substrate made of silicon having a porous silicon layer formed thereon by making the first silicon substrate porous, wherein said porous silicon layer contains pores having inner walls, and a nonporous monocrystalline silicon layer epitaxially grown on the porous silicon layer, laminating the first substrate onto a second substrate in a state that at least one of lamination faces of the first and the second substrates has a silicon oxide layer and the nonporous monocrystalline silicon layer is interposed between the laminated substrates, removing any of said first silicon substrate which remains, and removing the porous silicon layer by etching, wherein the porous silicon layer is removed by etching with an etching solution, wherein the nonporous monocrystalline silicon layer and the silicon oxide layer may be etched at respective etching rates of not more than 10 angstroms per minute by the etching solution.

2. The process for producing a semiconductor substrate according to claim 1, wherein the porous silicon layer is formed by anodization.

3. The process for producing a semiconductor substrate according to claim 1, wherein the silicon oxide layer is formed on the first substrate.

4. The process for producing a semiconductor substrate according to claim 3, wherein the silicon oxide layer is formed by thermal oxidation of the surface of the epitaxially grown nonporous monocrystalline silicon layer.

5. The process for producing a semiconductor substrate according to claim 3 or 4, wherein the second substrate is a monocrystalline silicon substrate.

6. The process for producing a semiconductor substrate according to claim 5, wherein the silicon oxide layer is formed on the lamination face of the second substrate.

7. The process for producing a semiconductor substrate according to claim 5, wherein the lamination face of the second substrate is constituted of monocrystalline silicon.

8. The process for producing a semiconductor substrate according to claim 3 or 4, wherein the second substrate is a glass substrate.

9. The process for producing a semiconductor substrate according to claim 1, wherein the silicon oxide layer is formed on the second substrate.

10. The process for producing a semiconductor substrate according to claim 9, wherein the silicon oxide layer is formed by thermal oxidation of the nonporous monocrystalline silicon layer.

11. The process for producing a semiconductor substrate according to any of claims 9 or 10, wherein the lamination face of the first substrate is the epitaxially grown nonporous monocrystalline silicon layer.

12. The process for producing a semiconductor substrate according to claim 1, wherein the nonporous monocrystalline silicon layer is formed by epitaxial growth after the inner walls of the pores in the porous layer is oxidized.

13. The process for producing a semiconductor substrate according to claim 12, wherein the nonporous monocrystalline silicon layer is formed by epitaxial growth after the porous layer is heat-treated in a hydrogen atmosphere.

14. The process for producing a semiconductor substrate according to claim 1, wherein the etching of the porous silicon layer is conducted with a mixed etching solution composed of hydrofluoric acid and aqueous hydrogen peroxide.

15. The process for producing a semiconductor substrate according to claim 1, wherein the etching of the porous silicon layer is conducted with a mixed etching solution composed of hydrofluoric acid, nitric acid, and optionally acetic acid.

16. The process for producing a semiconductor substrate according to claim 1, wherein the etching of the porous silicon layer is conducted with an alkali or an organic alkali etching solution.

17. The process for producing a semiconductor substrate according to claim 1, wherein the etching of the porous silicon layer is conducted with an aqueous TMAH solution of a concentration of not higher than about 50 ppm.

18. The process for producing a semiconductor substrate according to claim 1, wherein the etching of the porous silicon layer is conducted with a mixed solution of hydrofluoric acid and an aqueous hydrogen peroxide solution at a hydrofluoric acid concentration of not higher than about 0.5% relative to the aqueous hydrogen peroxide solution.

19. The process for producing a semiconductor substrate according to claim 1, wherein heat treatment is conducted in a hydrogen atmosphere after the removal by etching.

20. A process for producing a semiconductor substrate comprising steps of:

providing a first substrate comprised of a porous monocrystalline silicon layer and a nonporous monocrystalline silicon layer;

laminating the first substrate onto a second substrate so as to obtain a multilayered structure wherein a silicon oxide layer lies between lamination faces of the first and second substrates and the nonporous monocrystalline silicon layer is interposed between the laminated substrates; and

removing the porous monocrystalline silicon layer from the multilayered structure by etching with an etching solution, wherein the nonporous monocrystalline silicon layer and the silicon oxide layer may be etched at respective etching rates of not more than 10 angstroms per minute by the etching solution.

21. The process for producing a semiconductor substrate according to claim 20, wherein the laminating step further comprises a heat treatment.

22. The process for producing a semiconductor substrate according to claim 20, wherein the nonporous monocrystalline silicon layer is formed on the porous monocrystalline silicon layer by epitaxial growth.

23. The process for producing a semiconductor substrate according to claim 22, wherein the nonporous monocrystalline silicon layer is formed by a method selected from the group consisting of molecular-beam epitaxy, plasma CVD, reduced pressure CVD, thermal CVD, and sputtering.

24. The process for producing a semiconductor substrate according to claim 22, which process further comprises a step of oxidizing an inner surface of a pore of the porous monocrystalline silicon layer before forming the nonporous monocrystalline silicon layer.

25. The process for producing a semiconductor substrate according to claim 24, wherein the oxidizing step is comprised of a heat treatment of the porous monocrystalline silicon layer at a temperature of 200°

through 700°

C. in an oxygen atmosphere.

26. The process for producing a semiconductor substrate according to claim 25, wherein the oxidizing step is comprised of a heat treatment of the porous monocrystalline silicon layer at a temperature of 250°

through 500°

C. in an oxygen atmosphere.

27. The process for producing a semiconductor substrate according to claim 22, which process further comprises a step of annealing the porous monocrystalline silicon layer in a hydrogen atmosphere before forming the nonporous monocrystalline silicon layer.

28. The process for producing a semiconductor substrate according to claim 20, which process further comprises a step of annealing the multilayered structure in a hydrogen atmosphere after removing the porous monocrystalline silicon layer by etching.

29. The process for producing a semiconductor substrate according to claim 20, wherein the porous monocrystalline silicon layer is formed by making at least one portion of a monocrystalline silicon substrate porous by anodization.

30. The process for producing a semiconductor substrate according to claim 20, wherein the second substrate is comprised of a silicon substrate.

31. The process for producing a semiconductor substrate according to claim 20, wherein a set of the second substrate and the silicon oxide layer is formed by oxidizing a surface of a silicon substrate.

32. The process for producing a semiconductor substrate according to claim 20, wherein a set of the first substrate and the silicon oxide layer is formed by oxidizing a surface of the nonporous monocrystalline silicon layer of the substrate comprising the porous monocrystalline silicon layer and the nonporous monocrystalline silicon layer.

33. The process for producing a semiconductor substrate according to claim 20, wherein the silicon oxide layer is comprised of a first silicon oxide layer and a second silicon oxide layer;

a set of the first substrate and the first silicon oxide layer is formed by oxidizing a surface of the nonporous monocrystalline silicon layer of the substrate comprising the porous monocrystalline silicon layer and the nonporous monocrystalline silicon layer; and

a set of the second substrate and the second silicon oxide layer is formed by oxidizing a surface of a silicon substrate.

34. The process for producing a semiconductor substrate according to claim 20, wherein the first substrate is provided by forming the nonporous monocrystalline silicon layer on the porous monocrystalline silicon layer obtained by making a monocrystalline silicon substrate partially porous, and which process contains a step of removing a region remaining nonporous in the monocrystalline silicon substrate between the laminating step and the step of removing the porous monocrystalline silicon layer by etching.

35. The process for producing a semiconductor substrate according to claim 34, wherein the region remaining nonporous in the monocrystalline silicon substrate is removed by polishing or grinding.

36. The process for producing a semiconductor substrate according to claim 34, wherein the region remaining nonporous in the monocrystalline silicon substrate is removed by etching.

52. The process for producing a semiconductor substrate according to any of claims 20 through 51, wherein the etchant for etching the porous monocrystalline silicon layer is comprised of a tetramethylammonium hydroxide aqueous solution having a concentration of not more than 50 ppm.

53. The process for producing a semiconductor substrate according to any of claims 21 through 51, wherein the etchant for etching the porous monocrystalline silicon layer is comprised of a mixture of hydrofluoric acid and aqueous hydrogen peroxide solution, wherein the concentration of hydrofluoric acid is not more than 0.5% relative to the aqueous hydrogen peroxide solution.

37. A process for producing a semiconductor substrate comprising steps of:

providing a first substrate comprised of a porous monocrystalline silicon layer and a nonporous monocrystalline silicon layer;

laminating the first substrate onto a second substrate comprised of a silicon oxide so as to obtain a multilayered structure wherein the nonporous monocrystalline silicon layer is interposed between the laminated substrates; and

removing the porous monocrystalline silicon layer from the multilayered structure by etching with an etching solution, wherein the nonporous monocrystalline silicon layer and the silicon oxide layer may be etched at respective etching rates of not more than 10 angstroms per minute by the etching solution.

38. The process for producing a semiconductor substrate according to claim 37, wherein the second substrate is comprised of a quartz glass substrate or a crystallized glass substrate.

39. The process for producing a semiconductor substrate according to claim 37, wherein the laminating step further comprises a heat treatment.

40. The process for producing a semiconductor substrate according to claim 37, wherein the nonporous monocrystalline silicon layer is formed on the porous monocrystalline silicon layer by epitaxial growth.

41. The process for producing a semiconductor substrate according to claim 40, wherein the nonporous monocrystalline silicon layer is formed by a method selected from the group consisting of molecular-beam epitaxy, plasma CVD, reduced pressure CVD, thermal CVD, and sputtering.

42. The process for producing a semiconductor substrate according to claim 40, which process further comprises a step of oxidizing an inner surface of a pore of the porous monocrystalline silicon layer before forming the nonporous monocrystalline silicon layer.

43. The process for producing a semiconductor substrate according to claim 42, wherein the oxidizing step is comprised of a heat treatment of the porous monocrystalline silicon layer at a temperature of 200°

through 700°

C. in an oxygen atmosphere.

44. The process for producing a semiconductor substrate according claim 43, wherein the oxidizing step is comprised of a heat treatment of the porous monocrystalline silicon layer at a temperature of 250°

through 500°

C. in an oxygen atmosphere.

45. The process for producing a semiconductor substrate according to claim 40, which process further comprises a step of annealing the porous monocrystalline silicon layer in a hydrogen atmosphere before forming the nonporous monocrystalline silicon layer.

46. The process for producing a semiconductor substrate according to claim 37, which process further comprises a step of annealing the multilayered structure in a hydrogen atmosphere after removing the porous monocrystalline silicon layer by etching.

47. The process for producing a semiconductor substrate according to claim 37, wherein the porous monocrystalline silicon layer is formed by making at least one portion of a monocrystalline silicon substrate porous by anodization.

48. The process for producing a semiconductor substrate according to claim 37, which process further comprises a step of oxidizing a surface of the nonporous monocrystalline silicon layer of the first substrate before the laminating step.

49. The process for producing a semiconductor substrate according to claim 37, wherein the first substrate is provided by forming the nonporous monocrystalline silicon layer on the porous monocrystalline silicon layer obtained by making a monocrystalline silicon substrate partially porous, and which process contains a step of removing a region remaining nonporous in the monocrystalline silicon substrate between the laminating step and the step of removing the porous monocrystalline silicon layer by etching.

50. The process for producing a semiconductor substrate according to claim 49, wherein the region remaining nonporous in the monocrystalline silicon substrate is removed by polishing or grinding.

51. The process for producing a semiconductor substrate according to claim 49, wherein the region remaining nonporous in the monocrystalline silicon substrate is removed by etching.

54. A process for producing a semiconductor member by removing, from a member having a nonporous silicon on a silicon oxide and a porous silicon on said nonporous silicon, said porous silicon, wherein an etching solution having an etching rate not higher than 10 Å

/min. in etching both of the silicon oxide and the nonporous silicon is applied to said porous silicon, thereby etching the porous silicon.