Controlled linewidth reduction during gate pattern formation using an SiON BARC
First Claim
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1. A method for forming a gate structure from a semiconductor wafer stack comprising a substrate and a conductive layer above the substrate, the method comprising:
- depositing a SiOx Ny layer on the conductive layer, wherein the SiOx Ny layer is arranged to function as a bottom anti-reflective coating;
depositing a resist layer on the SiOx Ny layer;
forming a first resist mask with the resist layer while using the SiOx Ny layer as a bottom anti-reflective coating, wherein the first resist mask defines a first line having a first width;
isotropically etching the first resist mask to create a second resist mask, such that portions of the first line are removed to form a second line having a second width, wherein the second width is narrower than the first width;
etching through selected portions of the SiOx Ny layer as defined by the second resist mask; and
etching through selected portions of the gate conductive layer as defined by the etched SiOx Ny layer to form a gate from the gate conductive layer, wherein the gate has a gate width substantially equal to the second width, whereinthe SiOx Ny layer is configured to attenuate interference waves produced in forming the first resist mask.
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Abstract
A gate is formed by creating a wafer stack, that includes a gate conductive layer over a substrate layer, depositing a SiOx Ny layer over the conductive layer to act as a bottom anti-reflective coating (BARC), and forming a resist mask on the SiOx Ny layer. Next, the resist mask is isotropically etched to further reduce the critical dimensions of the gate pattern formed therein, and then the underlying BARC and wafer stack are etched to form a gate out of the conductive layer.
51 Citations
19 Claims
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1. A method for forming a gate structure from a semiconductor wafer stack comprising a substrate and a conductive layer above the substrate, the method comprising:
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depositing a SiOx Ny layer on the conductive layer, wherein the SiOx Ny layer is arranged to function as a bottom anti-reflective coating; depositing a resist layer on the SiOx Ny layer; forming a first resist mask with the resist layer while using the SiOx Ny layer as a bottom anti-reflective coating, wherein the first resist mask defines a first line having a first width; isotropically etching the first resist mask to create a second resist mask, such that portions of the first line are removed to form a second line having a second width, wherein the second width is narrower than the first width; etching through selected portions of the SiOx Ny layer as defined by the second resist mask; and etching through selected portions of the gate conductive layer as defined by the etched SiOx Ny layer to form a gate from the gate conductive layer, wherein the gate has a gate width substantially equal to the second width, wherein the SiOx Ny layer is configured to attenuate interference waves produced in forming the first resist mask. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for forming a gate structure from a semiconductor wafer stack comprising a substrate and a conductive layer above the substrate, the method comprising:
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depositing a SiOx Ny layer on the conductive layer, wherein the SiOx Ny layer is arranged to function as a bottom anti-reflective coating; depositing a resist layer on the SiOx Ny layer; forming a first resist mask with the resist layer while using the SiOx Ny layer as a bottom anti-reflective coating, wherein the first resist mask defines a first line having a first width; isotropically etching the first resist mask to create a second resist mask, such that portions of the first line are removed to form a second line having a second width, wherein the second width is narrower than the first width; etching through selected portions of the SiOx Ny layer as defined by the second resist mask; etching through selected portions of the gate conductive layer as defined by the etched SiOx Ny layer to form a gate from the gate conductive layer, wherein the gate has a gate width substantially equal to the second width; and removing the SiOx Ny layer and the second resist mask from the gate.
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19. A method for forming a gate on a semiconductor wafer using a bottom anti-reflective coating and a trim etch process, the method comprising:
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creating a wafer stack by forming a gate conductive layer over a substrate, depositing a SiOx Ny layer over the conductive layer to act as a bottom anti-reflective coating, and forming a resist mask on the SiOx Ny layer; isotropically etching the resist mask to reduce a width of a gate line pattern formed therein; and shaping the wafer stack using the isotropically etched resist mask by sequentially etching through exposed portions of the SiOx Ny layer and the gate conductive layer, wherein the SiOx Ny layer is configured to attenuate interference waves produced in forming the resist mask.
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Specification