Method for etching shallow trenches in a semiconductor body

  • US 6,107,206 A
  • Filed: 09/14/1998
  • Issued: 08/22/2000
  • Est. Priority Date: 09/14/1998
  • Status: Expired due to Term
First Claim
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1. A method of etching closely spaced trenches in a silicon body, said trenches having sloping side walls, the method comprising,introducing a monocrystalline silicon semiconductor body, with a surface masking layer with openings that define closely spaced shallow isolation trenches, into a plasma etching apparatus,providing a silicon object having an exposed silicon surface that is consumable by a plasma environment within the apparatus,establishing a reactive plasma environment within the apparatus that removes silicon from the semiconductor body through said openings in said masking layer and also silicon from said silicon object, said plasma influenced by the silicon removed from said object to thereby provide tapered side walls in the resultant trenches.

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