Wide range multiple band RF power detector

• US 6,108,527 A
• Filed: 07/31/1997
• Issued: 08/22/2000
• Est. Priority Date: 07/31/1997
• Status: Expired due to Term

• Current Assignee: WSOU Investments, LLC (WSOU Holdings, LLC)
• Original Assignee: Lucent Technologies, Inc. (Nokia Corporation)
• Inventors: Urban, Robert R., Youtz, Andrew E.
• Primary Examiner(s): Kuntz, Curtis A.
• Assistant Examiner(s): Eng, George
• Application Number:
  US08/903,873
• Time in Patent Office: 1,118 Days
• Field of Search: 455/91, 455/115, 455/126-128, 455/552-553, 455/575, 455/226.01, 455/74, 455/75, 330/129, 330/135-136, 330/140, 330/126-127, 330/133-134
• US Class Current: 455/115.3
• CPC Class Codes: H03G 3/3042 in modulators, frequency-changers, transmitters or power amplifiers transmission power control in bidirectional transmission systems H04W52/04
• CPC Class Codes: H04B 1/406 with more than one transmission mode, e.g. analog and digital modes

Abstract

The specification relates to a radio frequency (RF) power detection circuit for multiple frequency bands. One embodiment of the present invention uses semiconductors as power detection sensors and as temperature compensation devices. Multiple power detection sensor current signals each develop a voltage signal across a common load resistor. Similarly, multiple temperature compensation sensor current signals each develop a voltage signal across a second common load resistor. A detector voltage and a temperature compensation voltage are then processed through common amplification circuitry, producing a signal proportional to sensed transmitted power.

Claims

1. A multiple band radio frequency (RF) signal detection circuit for detecting signal strength of RF signals at a plurality of frequency bands, said signal detection circuit comprising:

a first detector device producing a first detector signal current, said first detector signal current related to a first RF signal strength at a first frequency band;

a second detector device producing a second detector signal current, said second detector signal current related to a second RF signal strength at a second frequency band;

a load developing impedance for receiving said first detector signal current and said second detector signal current, said load developing impedance converting said first detector signal current to a first detector signal voltage and said second detector signal current to a second detector signal voltage; and

an amplifier for providing an amplified output of said first detector signal voltage if a first RF signal is present and an amplified output of said second detector signal voltage if a second RF signal is present.

2. The apparatus in accordance with claim 1 further comprising a third detector device producing a third detector signal current related to a third RF signal strength at a third frequency band, said third detector device being in a parallel configuration to said first detector device and said second detector device.

3. The apparatus in accordance with claim 1 further comprising a plurality of detector devices, in a parallel configuration, producing a plurality of detector signal currents, each of said plurality of detector signal currents respectively related to a plurality of RF signal strengths at a respective plurality of frequency bands, wherein said load developing impedance further receives said plurality of detector signal currents and converts said plurality of detector signal currents to a respective plurality of detector signal voltages, and

wherein said amplifier further provides an amplified output of each of said plurality of detector signal voltages when each of a respective plurality of RF signals is present.

4. The apparatus of claim 3 wherein said plurality of detector devices are implemented using a plurality of semiconductor devices.

5. The apparatus in accordance with claim 4 further comprising:

a plurality of reference semiconductor devices, each of said plurality of reference semiconductor devices biased to produce a DC current approximately equal to a DC bias current associated with each of said plurality of detector devices; and

a reference developing resistor for receiving said DC current from each of said plurality of reference semiconductor devices and converting said DC current into a reference voltage,

wherein said reference voltage is applied as a second input to said amplifier, said reference voltage used to compensate for said DC bias current associated with each of said plurality of detector devices.

6. An apparatus for radio frequency (RF) signal strength detection within a dual frequency band transmitter, said apparatus providing an analog DC output proportional to a relative signal strength of a first RF signal if said first RF signal is being transmitted, said apparatus providing an analog DC output proportional to a relative signal strength of a second RF signal if said second RF signal is being transmitted, said apparatus comprising:

a first semiconductor detector device producing a first detector current at a first detector output, said first detector current proportional to a first RF signal strength sensed while said dual frequency band transmitter is transmitting at a first frequency band;

a second semiconductor detector device producing a second detector current at a second detector output, said second detector current proportional to a second RF signal strength sensed while said dual frequency band transmitter is transmitting at a second frequency band;

a load developing resistor having a first load end and a second load end, said first load end electrically coupled to said first detector output, said first load end further electrically coupled to said second detector output, said second load end electrically coupled to provide electrical continuity, said load developing resistor converting said first detector current to a first detector voltage proportional to said first RF signal strength if said dual frequency band transmitter is transmitting at said first frequency band, said load developing resistor converting said second detector current to a second detector voltage proportional to said second RF signal strength if said dual frequency band transmitter is transmitting at said second frequency band; and

a signal amplification stage having a first input terminal, a second input terminal, and an output terminal, said first input terminal electrically coupled to said first load end, said second input terminal electrically coupled to a DC reference voltage, said DC reference voltage selected to compensate for DC offset bias voltages generated by said first semiconductor detector device and said second semiconductor detector device, said output terminal providing a RF power detection device DC analog output proportional to said first RF signal strength if said dual frequency band transmitter is transmitting at said first frequency band, said output terminal providing a RF power detection device DC analog output proportional to said second RF signal strength if said dual frequency band transmitter is transmitting at said second frequency band.

7. The apparatus in accordance with claim 6 wherein said first semiconductor detector device and said second semiconductor detector device are diodes.

8. The apparatus in accordance with claim 6 wherein said first semiconductor detector device and said second semiconductor detector device are diode-connected transistors.

9. The apparatus in accordance with claim 6 further comprising an analog to digital (A/D) converter, said converter operable to convert said RF power detection device DC analog output to a digital output.

10. The apparatus in accordance with claim 6 further comprising:

a first reference semiconductor device matched to said first semiconductor detector device, said first reference semiconductor device biased to produce a first steady-state DC current approximately equal to a steady-state DC current of said first semiconductor detector device;

a second reference semiconductor device matched to said second semiconductor detector device, said second reference semiconductor device biased to produce a second steady-state DC current approximately equal to a steady-state DC current of said second semiconductor detector device;

a reference developing resistor for receiving, combining, and converting said first steady-state DC current and said second steady-state DC current into a reference voltage;

wherein said reference voltage is applied as a second input to said amplifier, said reference voltage utilized to compensate for said DC offset bias voltages.

11. The apparatus in accordance with claim 6 wherein said signal amplification stage is comprised of a first amplifier and a second amplifier,

wherein said first amplifier has a first amplifier output, said first amplifier output utilized as a signal amplification stage output during a high-powered RF signal transmission, and

wherein said second amplifier has a second amplifier output, said second amplifier accepting said first amplifier output as input to said second amplifier, said second amplifier output utilized as said signal amplification stage output during a low-powered RF signal transmission.

12. A temperature compensated, multiple band radio frequency (RF) signal detection circuit for detecting RF transmission signal strength at a plurality of frequency bands, said signal detection circuit comprising:

a forward biased first semiconductor detector operable to receive a first RF band transmission detection signal, said first semiconductor detector rectifying said first RF band transmission detection signal and producing a first semiconductor detector DC current, said first semiconductor detector DC current being partially comprised of a first semiconductor detector DC offset component and further being partially comprised of a first semiconductor detector analog DC component proportional to said first RF band transmission detection signal strength;

a forward biased second semiconductor detector operable to receive a second RF band transmission detection signal, said second semiconductor detector rectifying said second RF band transmission detection signal and producing a second semiconductor detector DC current, said second semiconductor detector DC current being partially comprised of a second semiconductor detector DC offset component and further being partially comprised of a second semiconductor detector analog DC component proportional to said second RF band transmission detection signal strength;

a load developing resistor having a first load end and a second load end, said first load end electrically coupled to receive said first semiconductor detector DC current and said second semiconductor detector DC current, said load developing resistor generating a power detection amplifier (PDA) signal input voltage, said PDA signal input voltage comprised of a first signal voltage, a second signal voltage, a third signal voltage, and a fourth signal voltage, said first signal voltage being a first semiconductor detector DC offset voltage, said second signal voltage being a second semiconductor detector DC offset voltage, said third signal voltage being a first semiconductor detector analog DC voltage proportional to said first RF band transmission detection signal strength, said fourth signal voltage being a second semiconductor detector analog DC voltage proportional to said second RF band transmission detection signal strength, said second load end electrically coupled to provide for electrical continuity; and

an amplifier having a first input terminal, a second input terminal, and an amplifier analog DC output, said first input terminal electrically coupled to accept said PDA signal input voltage, said second input terminal electrically coupled to accept a DC reference voltage, said amplifier analog DC output proportional to said third signal voltage during a first RF band transmission, said amplifier analog DC output proportional to said fourth signal voltage during a second RF band transmission.

13. The apparatus of claim 12 further comprising a forward biased third semiconductor detector, in a parallel configuration to said first semiconductor detector and said second semiconductor detector device, operable to receive a third RF band transmission detection signal, said third semiconductor detector rectifying said third RF band transmission detection signal and producing a third semiconductor detector DC current, said third semiconductor detector DC current being partially comprised of a third semiconductor detector DC offset component and further being partially comprised of a third semiconductor detector analog DC component proportional to said third RF band transmission detection signal strength,

wherein said load developing resistor is further operable to receive said third semiconductor detector DC current, said PDA signal input voltage further comprised of a fifth signal voltage and a sixth signal voltage, said fifth signal voltage being a third semiconductor detector DC offset voltage, said sixth signal voltage being a third semiconductor detector analog DC voltage proportional to said third RF band transmission detection signal strength, and

wherein said amplifier analog DC output is proportional to said sixth signal voltage during a third RF band transmission.

14. The apparatus in accordance with claim 13 wherein each of a plurality of semiconductor detectors is implemented using a diode detector.

15. The apparatus in accordance with claim 13 wherein each of a plurality of semiconductor detectors is implemented using a diode-connected transistor.

16. The apparatus in accordance with claim 13 wherein said DC reference voltage is generated by a plurality of forward biased semiconductor reference devices, each of said plurality of semiconductor reference devices matched to a specific forward biased semiconductor detector, each of said forward biased semiconductor reference devices generating a current approximately equal to a DC offset current generated by a specific matched forward biased semiconductor detector.

17. An apparatus for temperature compensated radio frequency (RF) transmission signal strength detection in a dual frequency band transmitter, said apparatus providing an analog DC output proportional to a relative signal strength of a first RF signal if said first RF signal is being transmitted, said apparatus providing an analog DC output proportional to a relative signal strength of a second RF signal if said second RF signal is being transmitted, said apparatus comprising:

a forward biased first detector semiconductor for accepting and rectifying a first RF band detection signal, said first detector semiconductor generating a first steady-state DC bias current, said first detector semiconductor additionally generating a first DC signal current when said first RF band detection signal is present;

a forward biased second detector semiconductor for accepting and rectifying a second RF band detection signal, said second detector semiconductor generating a second steady-state DC bias current, said second detector semiconductor additionally generating a second DC signal current when said second RF band detection signal is present;

a load resistor operable to accept said first steady-state DC bias current, said second steady-state DC bias current, said first DC signal current, and said second DC signal current, said load resistor developing an amplifier input signal voltage proportional to current accepted;

a forward biased first reference semiconductor to provide for temperature compensation, said first reference semiconductor matched to said first detector semiconductor, said first reference semiconductor generating a third steady-state DC bias current approximately equal to said first steady-state DC bias current;

a forward biased second reference semiconductor to provide for temperature compensation, said second reference semiconductor matched to said second detector semiconductor, said second reference semiconductor generating a fourth steady-state DC bias current approximately equal to said second steady-state DC bias current;

a reference resistor accepting said third steady-state DC bias current and said fourth steady-state DC bias current, said reference resistor developing an amplifier input reference voltage proportional to current accepted; and

an amplifier with a first input terminal, a second input terminal, and an output, said first input terminal accepting said amplifier input signal voltage, said second input accepting said amplifier input reference voltage, said output proportional to said first RF signal when said first RF signal is being transmitted, said output proportional to said second RF signal when said second RF signal is being transmitted.

18. The apparatus in accordance with claim 17 wherein said dual frequency band transmission comprises a cellular frequency band and a Personal Communication Services (PCS) frequency band.

19. The apparatus in accordance with claim 17 wherein said first detector semiconductor, said second detector semiconductor, said first reference semiconductor, and said second reference semiconductor are each implemented using diodes.

20. The apparatus in accordance with claim 17 wherein said first detector semiconductor, said second detector semiconductor, said first reference semiconductor, and said second reference semiconductor are each implemented utilizing diode-connected bipolar transistors.

21. The apparatus in accordance with claim 17 further comprising an analog to digital (A/D) converter, said converter operable to convert said analog DC output to a digital output.

22. The apparatus in accordance with claim 17 wherein said amplifier is implemented in stages and said amplifier output conveyed as a signal input to a modulator, said amplifier further comprising:

a first amplifier stage, said first amplifier stage implemented as a differential amplifier; and

a second amplifier stage, said second amplifier stage accepting a first amplifier stage output as an input to said second amplifier stage, said second amplifier stage implemented as a non-inverting amplifier.