Method for improving bondability for deep-submicron integrated circuit package

  • US 6,110,816 A
  • Filed: 03/05/1999
  • Issued: 08/29/2000
  • Est. Priority Date: 03/05/1999
  • Status: Expired due to Term
First Claim
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1. A method for forming a wire ball bonding surface site on a semiconductor die comprising the steps of:

  • providing a semiconductor substrate having a top electically conducting layer, andan overlying layer covering said top electrically conducting layer, anda photoresist applied to said overlying layer;

    patterning said photoresist to form an array of submicron size holes;

    etching openings through said overlying layer to said top electrically conducting layer, and forming a rough textured surface profile in said top electrically conducting layer through said openings of said overlying layer;

    depositing a passivation film over said overlying layer and forming wiring pad windows for wire ball bonding.

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