High density plasma chemical vapor deposition process
First Claim
1. A method for forming conducting structures separated by gaps on a substrate, comprising:
- providing a substrate and a wiring line layer above the substrate;
forming a first antireflective coating on the wiring line layer;
forming a second antireflective coating on the first antireflective coating, wherein the first antireflective coating and the second antireflective coating are formed from different materials;
forming a mask layer above the second antireflective coating, wherein the mask layer covers selected portions of the second antireflective coating and exposes other portions of the second antireflective coating;
etching the first antireflective coating, the second antireflective coating, and the wiring line layer, at the location where the second antireflective coating is exposed by the mask layer, to form wiring lines separated by gaps; and
depositing a dielectric material within the gaps to fill the gaps, using high density plasma chemical vapor deposition.
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Abstract
A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.
42 Citations
21 Claims
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1. A method for forming conducting structures separated by gaps on a substrate, comprising:
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providing a substrate and a wiring line layer above the substrate; forming a first antireflective coating on the wiring line layer; forming a second antireflective coating on the first antireflective coating, wherein the first antireflective coating and the second antireflective coating are formed from different materials; forming a mask layer above the second antireflective coating, wherein the mask layer covers selected portions of the second antireflective coating and exposes other portions of the second antireflective coating; etching the first antireflective coating, the second antireflective coating, and the wiring line layer, at the location where the second antireflective coating is exposed by the mask layer, to form wiring lines separated by gaps; and depositing a dielectric material within the gaps to fill the gaps, using high density plasma chemical vapor deposition. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for forming conducting structures separated by gaps on a substrate, comprising:
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providing a substrate and a wiring line layer above the substrate; forming a cap layer above the wiring line layer; forming a mask layer above the cap layer, wherein the mark layer covers selected portions of the cap layer and exposes other portions of the cap layer; etching the cap layer, and the wiring line layer, at the locations where the cap layer is exposed by the mask layer, to form wiring lines separated by gaps, the wiring lines having a remaining portion of the cap layer thereon; and depositing a dielectric material within the gaps at a sputtering rate sufficient to fill the gaps, using high density plasma chemical vapor deposition. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method for forming conducting structures separated by gaps filled with dielectric material, comprising the steps of:
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providing a substrate containing silicon, the substrate having a surface; forming a surface layer comprising at least one material selected from the group consisting of titanium nitride, titanium suicide and a titanium-tungsten alloy, the surface layer disposed on the substrate surface; forming a metal wiring layer on the surface layer, the metal wiring layer having an upper surface; forming a protective layer comprising at least one material selected from the group consisting of titanium nitride, titanium silicide and a titanium-tungsten alloy, the protective layer disposed on the upper surface of the metal wiring layer, the protective layer having a top surface; forming a cap layer comprising at least one material selected from the group consisting of an oxide, a nitride, and an oxynitride, the cap layer disposed on the top surface of the protective layer; forming a patterned photoresist layer above the cap layer, said patterned photoresist layer covering selected portions of the cap layer and exposing other portions of the cap layer; etching the exposed portions of the cap layer, the protective layer and the metal layer to form wiring lines separated by gaps; and forming a layer of high density plasma chemical vapor deposition dielectric material within the gaps to fill the gaps.
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Specification