High density plasma chemical vapor deposition process

  • US 6,117,345 A
  • Filed: 10/28/1997
  • Issued: 09/12/2000
  • Est. Priority Date: 04/02/1997
  • Status: Expired due to Term
First Claim
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1. A method for forming conducting structures separated by gaps on a substrate, comprising:

  • providing a substrate and a wiring line layer above the substrate;

    forming a first antireflective coating on the wiring line layer;

    forming a second antireflective coating on the first antireflective coating, wherein the first antireflective coating and the second antireflective coating are formed from different materials;

    forming a mask layer above the second antireflective coating, wherein the mask layer covers selected portions of the second antireflective coating and exposes other portions of the second antireflective coating;

    etching the first antireflective coating, the second antireflective coating, and the wiring line layer, at the location where the second antireflective coating is exposed by the mask layer, to form wiring lines separated by gaps; and

    depositing a dielectric material within the gaps to fill the gaps, using high density plasma chemical vapor deposition.

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