Method to adjust multilayer film stress induced deformation of optics

• US 6,134,049 A
• Filed: 09/25/1998
• Issued: 10/17/2000
• Est. Priority Date: 09/25/1998
• Status: Expired due to Term

• Current Assignee: EUV Limited Liability Corporation
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Spiller, Eberhard A., Bajt, Sasa, Montcalm, Claude, Mirkarimi, Paul B., Folta, James A.
• Primary Examiner(s): CHANG, AUDREY Y
• Application Number:
  US09/160,264
• Time in Patent Office: 753 Days
• Field of Search: 359/580, 359/584, 359/586, 359/589, 359/350, 359/356, 359/359, 378/146, 378/82
• US Class Current: 359/590
• CPC Class Codes: G02B 5/0875 the reflecting layers comprising two or more metallic layers
• CPC Class Codes: G02B 5/0891 Ultraviolet [UV] mirrors apparatus for microlithography exposure G03F7/70; X-ray multilayer structures G21K1/06
• CPC Class Codes: G02B 5/26 Reflecting filters G02B5/28 takes precedence
• CPC Class Codes: G03F 1/22 Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
• CPC Class Codes: G03F 7/70958 Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
• CPC Class Codes: G21K 1/062 Devices having a multilayer structure

Abstract

Stress compensating systems that reduces/compensates stress in a multilayer without loss in reflectivity, while reducing total film thickness compared to the earlier buffer-layer approach. The stress free multilayer systems contain multilayer systems with two different material combinations of opposite stress, where both systems give good reflectivity at the design wavelengths. The main advantage of the multilayer system design is that stress reduction does not require the deposition of any additional layers, as in the buffer layer approach. If the optical performance of the two systems at the design wavelength differ, the system with the poorer performance is deposited first, and then the system with better performance last, thus forming the top of the multilayer system. The components for the stress reducing layer are chosen among materials that have opposite stress to that of the preferred multilayer reflecting stack and simultaneously have optical constants that allow one to get good reflectivity at the design wavelength. For a wavelength of 13.4 nm, the wavelength presently used for extreme ultraviolet (EUV) lithography, Si and Be have practically the same optical constants, but the Mo/Si multilayer has opposite stress than the Mo/Be multilayer. Multilayer systems of these materials have practically identical reflectivity curves. For example, stress free multilayers can be formed on a substrate using Mo/Be multilayers in the bottom of the stack and Mo/Si multilayers at the top of the stack, with the switch-over point selected to obtain zero stress. In this multilayer system, the switch-over point is at about the half point of the total thickness of the stack, and for the Mo/Be--Mo/Si system, there may be 25 deposition periods Mo/Be to 20 deposition periods Mo/Si.

Claims

1. A multilayer reflective optical element, comprising:

a substrate,

a multilayer system of a first composition deposited on the substrate, and

a multilayer system of a second composition deposited on the first deposited multilayer system,

a switch-over point from the first composition to the second composition being at about one half of a total thickness of an overall multilayer system,

each of said multilayer systems having opposite stresses, whereby overall stress on the substrate is near-zero.

2. The multilayer reflective element of claim 1, wherein said first and second compositions are composed of materials selected from the group consisting of Mo, Si and Be.

3. The multilayer reflective element of claim 2, wherein said first composition is composed of either Mo/Be or Mo/Si, and the second composition is composed of Mo/Si or Mo/Be.

4. The multilayer reflective element of claim 3, wherein the composition of said first and second compositions is dependent on design wavelengths and angle of incidence of a system using the multilayer reflective element.

5. The multilayer reflective element of claim 4, wherein the design wavelength is about 13.4 nm at normal incidence, and wherein said first and second compositions are either Mo/Be or Mo/Si.

6. The multilayer reflective element of claim 5, wherein said first composition is Mo/Be, and wherein said second composition is Mo/Si.

7. The multilayer reflective element of claim 4, wherein the design wavelength is about 11.4 nm at normal incidence, wherein the first composition is Mo/Si, and wherein the second composition is Mo/Be.

8. The multilayer reflective element of claim 1, wherein said overall multilayer system includes multilayer deposition periods thickness in the range of 5.7 to 12 nm.

9. The multilayer reflective element of claim 8, wherein said overall multilayer system includes about 25 deposition periods of Mo/Be and about 20 deposition periods of Mo/Si.

10. The multilayer reflective element of claim 8, wherein said overall multilayer system has about 50 deposition periods, with about half being Mo/Be and about half being Mo/Si.

11. The multilayer reflective element of claim 1, wherein said multilayer system has a reflectivity of at least 64%, with near-zero stress.

12. A method for fabricating a stress compensating system that reduces total multilayer thickness without loss in reflectivity, comprising:

providing a substrate,

depositing on the substrate a multilayer system composed of two different multilayer material combinations having opposite stress; and

switching from one of the two multilayer material combinations to another one of the two multilayer material combinations at about one half of the overall thickness of the multilayer material thickness.

13. The method of claim 12, wherein each multilayer material combinations has an optical performance at a design wavelength, and additionally including depositing the multilayer material combination having a lesser optical performance first.

14. The method claim 12, additionally including determining a design wavelength of the multilayer system, and depositing the multilayer material combination having a greater optical performance at that designed wavelength last.

15. The method of claim 12, wherein said two different multilayer material combinations are to be utilized at wavelengths of about 13.4 nm and about 11.4 nm, and depositing last the multilayer material combination having a better optical performance at each of the wavelengths.

16. The method of claim 12, additionally including forming the multilayer material combinations from materials selected from the group consisting of Mo, Si and Be.

17. The method of claim 16 wherein the multilayer system is to be used at a wavelength of about 13.4 nm, wherein said material combinations are composed of Mo/Be and Mo/Si, and wherein the Mo/Be material combination is deposited on the substrate, and the Mo/Si material combination is deposited on the Mo/Be material combination.

18. The method of claim 16, wherein the multilayer system is to be used at a wavelength of about 11.4 nm, and wherein said material combinations are composed of Mo/Si and Mo/Be, and wherein the Mo/Si material combination is deposited first.

19. The method of claim 12, additionally including depositing deposition periods of each of the two different multilayer material combinations to produce a multilayer system having a total deposition period thickness in the range of about 10-25 nm, and wherein each of said two different multilayer material combinations comprise deposition periods of about one half of the total deposition periods.

20. A multilayer reflective element comprising:

two multilayer systems,

one of said two multilayer systems being composed of alternating layers of Mo and Be,

another of said two multilayer systems being composed of alternating layers of Mo and Si,

said two multilayer systems having opposite stress for reducing the total stress of the reflective element to near zero.

21. The multilayer reflective element of claim 20, wherein said two multilayer systems have about an equal number of alternating layers.

22. The multilayer reflective element of claim 20, wherein said two multilayer systems are switched at about one half of a total thickness of an overall multilayer thickness.

23. The multilayer reflective element of claim 20, wherein each of said two multilayer systems has an optical performance at a wavelength and wherein one of said two multilayer systems having a greater optical performance at that wavelength is located on the other of said two multilayer systems.