Asymmetric, double-sided self-aligned silicide and method of forming the same

CAFC
  • US 6,147,405 A
  • Filed: 02/19/1998
  • Issued: 11/14/2000
  • Est. Priority Date: 02/19/1998
  • Status: Expired due to Term
First Claim
Patent Images

1. An integrated circuit comprising:

  • a silicon substrate;

    an insulating layer formed over the silicon substrate with a contact opening formed in the insulating layer; and

    a conductive contact directly contacting the silicon substrate within the contact opening, the contact comprising metal silicide interspersed with metal nitride throughout the metal silicide, including at a substrate-silicide interface.

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