Semiconductor component with a control electrode for modulating the conductivity of a channel area by means of a magnetoresistor structure

• US 6,150,675 A
• Filed: 01/15/1999
• Issued: 11/21/2000
• Est. Priority Date: 07/16/1996
• Status: Expired due to Term

• Current Assignee: Infineon Technologies AG
• Original Assignee: Siemens AG
• Inventors: Franke, Torsten, Turkes, Peter, Brunner, Heinrich, Porst, Alfred
• Primary Examiner(s): WOJCIECHOWICZ, EDWARD JOSEPH
• Application Number:
  US09/214,931
• Time in Patent Office: 676 Days
• Field of Search: 257/139, 257/328, 257/341, 257/370, 257/378, 257/394, 257/401, 257/408, 257/411
• US Class Current: 257/139
• CPC Class Codes: H01L 29/404 Multiple field plate structures
• CPC Class Codes: H01L 29/7395 Vertical transistors, e.g. vertical IGBT
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A semiconductor component having a control structure for modulating the conductivity of a channel region wherein a small-area gate electrode of the proposed component covers the substrate only over a length L_gd ≈L_dep (L_dep :=width of the space-charge zone in the substrate). An auxiliary electrode conductively connected to the source metallization and extending up to the edge of the symmetry unit is embedded in the gate oxide and is arranged spaced from the gate electrode. It sees to a comparatively uniform field distribution in the edge region of the gate electrode and thus prevents the electrical field strength in the semiconductor from reaching the critical value of approximately 10⁵ V/cm that triggers surge ionization.

Claims

1. A semiconductor component having a control structure for modulating the conductivity of a channel region, the semiconductor component comprising:

a semiconductor body having a first principal surface and a second principal surface, the first principal surface provided with a first electrode and the second principal surface at a control structure side of the semiconductor component provided with a semiconductor layer of a first conductivity type;

a first semiconductor region of the first conductivity type and a second semiconductor region of a second conductivity type formed at a surface of the semiconductor layer on the control structure side, wherein a region of the second semiconductor region which lies between the first semiconductor region and a part of the semiconductor layer outside of the second semiconductor region is provided as a channel and is present at the surface of the semiconductor layer;

a second electrode contacting the first and second semiconductor regions outside the region provided for the channel;

a gate electrode arranged electrically insulated from the semiconductor layer and parallel to the surface of the semiconductor at the control structure side, the gate electrode covering at least a region provided for the channel; and

a third electrode arranged electrically insulated from the gate electrode and parallel to the surface of the semiconductor layer at the control structure side at a lateral spacing from the gate electrode with respect to a plane of the surface as well as spaced from the first and second semiconductor regions and electrically insulated from the semiconductor layer at least in a region adjoining the gate electrode, wherein the second and third electrodes are electrically connected to one another or charged with a same potential.

2. A semiconductor component as claimed in claim 1, further comprising:

a third semiconductor region of the second conductivity type formed at an edge side of the semiconductor layer and extending up to the surface thereof, the third semiconductor region being electrically connected to the second electrode.

3. A semiconductor component as claimed in claim 1, wherein the gate electrode and the third electrode lie in the same plane oriented parallel to the structure surface of the semiconductor layer.

4. A semiconductor component as claimed in claim 1, further comprising:

an electrical insulator wherein the gate electrode and the third electrode are embedded into the electrical insulator and the second electrode covers at least a part of a surface of the electrical insulator.

5. A semiconductor component as claimed in claim 1, wherein the gate electrode is formed of polycrystalline silicon.

6. A semiconductor component as claimed in claim 4, further comprising:

a region of electrically conductive material embedded into the electrical insulator wherein the region conductively connects the second electrode to the third electrode.

7. A semiconductor component as claimed in claim 6, wherein a region of electrically conductive material contacts the third semiconductor region of the semiconductor layer.

8. A semiconductor component as claimed in claim 1, wherein the semiconductor body is doped of one of the first and second conductivity types.

9. A semiconductor component as claimed in claim 1, wherein the gate electrode overlaps the semiconductor layer over a length which is substantially equal to a width of a space-charged zone in the semiconductor layer at a junction to the second semiconductor region given maximum conductivity-state current.