MOS type image sensor

  • US 6,150,676 A
  • Filed: 03/11/1999
  • Issued: 11/21/2000
  • Est. Priority Date: 03/31/1998
  • Status: Expired due to Term
First Claim
Patent Images

1. A MOS type image sensor having an image area containing an array of pixels and a peripheral circuitry area having a peripheral circuit disposed in a first well region of a first conductivity type for driving the image area, each pixel comprising:

  • (a) a second well region of the first conductivity type, having a lower impurity concentration than the first well region;

    (b) a photodiode having;

    a first main electrode region made of the second well region; and

    a second main electrode region formed as a first diffusion layer of a second conductivity type opposite to the first conductivity type, disposed at a part of the surface of and in the second well region;

    (c) a read transistor having;

    a first main electrode region made of the first diffusion layer;

    a second main electrode region formed as a second diffusion layer of the second conductivity type disposed at a part of the surface of and in the second well region;

    a gate insulation film disposed on the surface of the second well region between the first and second diffusion layers; and

    a gate electrode disposed on the gate insulation film and connected to a read signal line; and

    (d) an amplification transistor disposed in a third well region of the first conductivity type, having;

    a gate electrode connected to the second main electrode region of the read transistor;

    a first main electrode region connected to an output signal line; and

    a second main electrode region.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×