Active pixel sensor with inter-pixel function sharing

• US 6,160,281 A
• Filed: 02/28/1997
• Issued: 12/12/2000
• Est. Priority Date: 02/28/1997
• Status: Expired due to Term

• Current Assignee: Omnivision Technologies Incorporated (Will Semiconductor Co., Ltd. Shanghai)
• Original Assignee: Eastman Kodak Company
• Inventors: Guidash, Robert M.
• Primary Examiner(s): Munson, Gene M.
• Application Number:
  US08/808,444
• Time in Patent Office: 1,383 Days
• Field of Search: 257/291, 257/292, 327/515
• US Class Current: 257/292
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14641 Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements

Abstract

An image sensor having a plurality of pixels comprising a semiconductor material of a first conductivity type with at least two adjacent pixels, each of the pixels has a photodetector formed within the substrate and an electrical function that is shared between the adjacent pixels integrated within the adjacent pixels. The electrical function can be: a transfer gate, a reset gate, a row select gate, an amplifier drain, an output node, a floating diffusion, a reset drain, a lateral overflow gate, an overflow drain or an amplifier, that is shared between multiple pixels resulting in a saving of space.

Claims

1. An image sensor having a plurality of pixels comprising:

a semiconductor material of a first conductivity type;

at least two adjacent pixels each of the pixels having photodetectors formed within the substrate; and

at least one electrical function integrated within the adjacent pixels that is shared between the adjacent pixels, wherein the electrical function is an electrical contact that is selected from one of the following components (a photogate contact, a transfer gate contact, a row select gate contact, an output node contact, or an amplifier contact).

2. An image sensor having a plurality of pixels comprising:

a semiconductor material of a first conductivity type; and

at least two adjacent pixels, each of the pixels having a photodetector formed within the substrate with a sense node, an amplifier, row select transistor, and reset transistor are integrated within the adjacent pixels such that they are shared by the adjacent pixels.

3. The image sensor of claim 2 further comprising a contact region formed on at least one of the electrical components that are shared by the adjacent pixels.

4. The image sensor of claim 2 further comprising a contact region formed on each of the adjacent pixels for operation of one of the electrical components that is shared.

5. An image sensor having a plurality of pixels comprising:

a semiconductor material of a first conductivity type;

at least two adjacent pixels having photodetectors formed within the substrate such that each pixel has at least one electrical component integrated within the pixel, and

a contact region that is shared by the electrical components of the adjacent pixels, wherein the electrical contact is selected from one of the following (a photogate contact, a transfer gate contact, a row select gate contact, an amplifier drain contact, or an amplifier contact).

6. The image sensor of claim 5 wherein in addition to sharing the contact region, the electrical component is constructed with at least a portion of the electrical component formed along a common border of the adjacent pixels.