Solid-state imaging device

  • US 6,166,405 A
  • Filed: 04/20/1999
  • Issued: 12/26/2000
  • Est. Priority Date: 08/21/1998
  • Status: Active Grant
First Claim
Patent Images

1. A solid-state imaging device comprising a plurality of pixels, each pixel comprising:

  • a semiconductor substrate;

    a photo-receiving portion formed in the semiconductor substrate;

    a diffusion region formed in the semiconductor substrate;

    a first insulating film formed on the semiconductor substrate;

    a gate electrode formed on the first insulating film at least between the photo-receiving portion and the diffusion region; and

    a read-out circuit, which is electrically connected to either one of the photo-receiving portion and the diffusion region;

    wherein a reflection reducing film is formed on the first insulating film above a region of the semiconductor substrate including at least part of the photo-receiving portion and excluding at least part of the diffusion region, the reflection reducing film including a material whose refractive index is smaller than that of silicon and is larger than that of silicon oxide.

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