System of components to be hybridized and hybridization process allowing for thermal expansions

• US 6,170,155 B1
• Filed: 05/15/1997
• Issued: 01/09/2001
• Est. Priority Date: 05/20/1996
• Status: Expired due to Term

• Current Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Original Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Inventors: Marion, François, Chantre, Chantal
• Primary Examiner(s): Young, Lee
• Assistant Examiner(s): SMITH, SEAN PRENTISS
• Application Number:
  US08/856,721
• Time in Patent Office: 1,335 Days
• Field of Search: 298/40, 298/30, 298/32, 298/29, 297/39, 297/41, 298/41, 298/42, 29/250.1, 228/56.3, 228/180.22, 228/193, 228/197, 228/195, 228/245
• US Class Current: 29/840
• CPC Class Codes: B81C 2203/032 Gluing
• CPC Class Codes: B81C 3/002 Aligning microparts
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/13116 Lead [Pb] as principal constituent
• CPC Class Codes: H01L 2224/16108 the bump connector not being orthogonal to the surface
• CPC Class Codes: H01L 2224/81194 Lateral distribution of the bump connectors
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 of an individual bump connector
• CPC Class Codes: H01L 24/81 using a bump connector
• CPC Class Codes: H01L 2924/0001 Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/0102 Calcium [Ca]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01049 Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/01061 : Promethium [Pm]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H01L 2924/381 : Pitch distance
• CPC Class Codes: H05K 2201/09427 : Special relation between the location or dimension of a pad or land and the location or dimension of a terminal
• CPC Class Codes: H05K 2203/0465 : Shape of solder, e.g. differing from spherical shape, different shapes due to different solder pads
• CPC Class Codes: H05K 3/3436 : having an array of bottom contacts, e.g. pad grid array or ball grid array components
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10T 29/49144 : by metal fusion
• CPC Class Codes: Y10T 29/49147 : Assembling terminal to base
• CPC Class Codes: Y10T 29/49151 : by deforming or shaping

Abstract

This invention relates to a system of components to be hybridized including at least one first component (110) with first pads (114a) and with a first coefficient of expansion, and at least one second component (112) with second pads (114b) and with a second coefficient of expansion. According to the invention, at a hybridization temperature Th the pads are approximately superposable, and at an ambient temperature Ta the pads are mutually offset by a distance compensating for the differential expansion of the first and second components.

Claims

1. System of components to be hybridized comprising at least one first component (110) with first hybridization ball reception pads (114a) and with a first coefficient of thermal expansion (α

₁) and at least one second component (112) with second hybridization ball reception pads (114b) and with a second coefficient of thermal expansion (α

₂) different from said first coefficient of thermal expansion (α

₁), the first and second pads being associated in pairs to form pairs of pads, wherein at a hybridization temperature (Th) the first and second pads (114a, 114b) in each pair of pads are approximately superposable, and at ambient temperature (Ta), the pads (114a, 114b) occupy a position such that when the second component (112) is placed above the first component (110), the first and second pads (114a, 11b) in each pair of pads are mutually offset along a direction connecting the pads in the pair of pads, by a distance compensating a differential expansion of the first and second components (110, 112) between the ambient temperature (Ta) and the hybridization temperature (Th), said differential expansion being due to the difference between said first and second coefficients of thermal expansion.

2. System according to claim 1, wherein the compensation distance between the first and second pads (114a, 114b) in each pair of pads is proportional to:

a distance separating the first and second pads (114a, 114b) from a center of gravity (B) of the first and second pads, respectively;

a temperature difference between the ambient temperature (Ta) and the hybridization temperature (Th); and

a difference between the first and second coefficients of expansion (α

₁, α

₂).

3. System according to claim 1, wherein the second coefficient of expansion (α

₂) is greater than the first coefficient of expansion (α

₁) and at ambient temperature the second pads (114b) are placed in a position which is offset from the corresponding first pads, along a direction bringing them towards a center of gravity (B) of the pads on the second component.

4. System according to claim 1, wherein the first and second pads (114a, 114b) of each pair of pads (i) are formed at a location such that at ambient temperature they are at a distance from the center of gravity of pads (b) by a distance d₁(i) and d₂(i) such that d₁(i) (1+α

₁▴

T)=d₂(i) (1+α

₂▴

T) where α

₁ and α

₂ are the first and second coefficients of expansion respectively, and ▴

T is a difference between the hybridization temperature and the ambient temperature.

5. System according to claim 1, wherein the first pads (114a) are equipped with solder balls.

8. System according to claim 1, wherein one of said first and second components comprises silicon and the other of said first and second components comprises a material selected from the group of AsGa and InSb.

6. Process for preparing at least one first and at least one second component (110, 112) for their hybridization by solder balls (110), the first component (110) comprising first ball reception pads (114a) and with a first coefficient of expansion (α

₁), the second component (112) comprising second ball reception pads (114b) and with a second coefficient of expansion (α

₂) different from said first coefficient of expansion (α

₁), the first and second pads being associated in pairs respectively to form pairs of pads, comprising the steps of;

forming the first and second pads (114a, 11b) on the first and second components at locations such that at hybridization temperature (Th) the first and second pads (114a, 114b) of each pair of pads are approximately superposable, and such that at ambient temperature (Ta), the first and second pads in each pair of pads are mutually offset by a distance to compensate for differential expansion of the first and second components between ambient temperature (Ta) and hybridization temperature (Th), said differential expansion being due to the difference between said first and second coefficients of thermal expansion; and

equipping at least one of the first and second pads with balls made of a meltable material (118).

7. Hybridization process using solder balls, of at least one first component (110) with at least one second component (112), comprising the steps of:

equipping the first and second components with ball reception pads (114a, 114b) and solder balls (118), in accordance with the preparation process according to claim 6;

placing the first and second components on each other (110, 112);

increasing the temperature of the first and second components (110, 112) and balls (118) to the hybridization temperature (Th) to interconnect the first and second pads (114a, 114b) in each pair of pads, by soldering the balls (118) on these pads; and

cooling the structure thus obtained.

9. Process according to claim 6, further comprising the step of forming one of the first and second components of silicon and the other of said first and second components of a material selected from the group of AsGa and InSb.

10. System of components to be hybridized comprising at least one component (110) with first hybridization ball reception pads (114a) and with a first coefficient of thermal expansion (α

₁) and at least one second component (112) with second hybridization ball reception pads (114b) and with a second coefficient of thermal expansion (α

₂) substantially different from said first coefficient of thermal expansion (α

₁), the first and second pads being associated in pairs to form pairs of pads, wherein at a hybridization temperature (Th) the first and second pads (114a, 114b) in each pair of pads are approximately superposable, and at ambient temperature (Ta), the pads (114a, 114b) occupy a position such that when the second component (112) is placed above the first component (110), the first and second pads (114a, 114b) in each pair of pads are mutually offset along a direction connecting the pads in the pair of pads, by a distance compensating a differential expansion of the first and second components (110, 112) between the ambient temperature (Ta) and the hybridization temperature (Th), said differential expansion being due to the difference between said first and second coefficients of thermal expansion.

11. System according to claim 10, wherein the compensation distance between the first and second pads (114a, 114b) in each pair of pads is proportional to:

a distance separating the first and second pads (114a, 114b) from a center of gravity (B) of the first and second pads, respectively;

a temperature difference between the ambient temperature (Ta) and the hybridization temperature (Th); and

a difference between the first and second coefficients of expansion (α

₁, α

₂).

12. System according to claim 10, wherein the second coefficient of expansion (α

₂) is greater than the first coefficient of expansion (α

₁), and at ambient temperature the second pads (114b) are placed in a position which is offset from the corresponding first pads, along a direction bringing them towards a center of gravity (B) of the pads on the second component.

13. System according to claim 10, wherein the first and second pads (114a, 114b) of each pair of pads (i) are formed at a location such that at ambient temperature they are at a distance from the center of gravity of pads (b) by a distance d₁(i) and d₂(i) such that d₁(i) (1+α

₁▴

T)=d₂(i) (1+α

₂▴

T) where α

₁ and α

₂ are the first and second coefficients of expansion respectively, and ▴

T is a difference between the hybridization temperature and the ambient temperature.

14. System according to claim 10, wherein the first pads (114a) are equipped with solder balls.

17. System according to claim 10, wherein one of said first and second components comprises silicon and the other of said first and second components comprises a material selected from the group of AsGa and InSb.

15. Process for preparing at least one first and at least one second component (110, 112) for their hybridization by solder balls (110), the first component (110) comprising first ball reception pads (114a) and with a first coefficient of expansion (α

₁), the second component (112) comprising second ball reception pads (114b) and with a second coefficient of expansion (α

₂) substantially different from said first coefficient of expansion (α

₁), the first and second pads being associated in pairs respectively to form pairs of pads, comprising the steps of;

forming the first and second pads (114a, 11b) on the first and second components at locations such that at hybridization temperature (Th), the first and second pads (114a, 114b) of each pair of pads are approximately superposable, and such that at ambient temperature (Ta), the first and second pads in each pair of pads are mutually offset by a distance to compensate for differential expansion of the first and second components between ambient temperature (Ta) and hybridization temperature (Th), said differential expansion being due to the difference between said first and second coefficients of thermal expansion; and

equipping at least one of the first and second pads with balls made of a meltable material (118).

16. Hybridization process using solder balls, of at least one first component (110) with at least one second component (112), comprising the steps of:

equipping the first and second components with ball reception pads (114a, 114b) and solder balls (118), in accordance with the preparation process according to claim 15;

placing the first and second components on each other (110, 112);

increasing the temperature of the first and second components (110, 112) and balls (118) to the hybridization temperature (Th) to interconnect the first and second pads (114a, 114b) in each pair of pads, by soldering the balls (118) on these pads; and

cooling the structure thus obtained.

18. Process according to claim 15, further comprising the step of forming one of the first and second components of silicon and the other of said first and second components of a material selected from the group of AsGa and InSb.